- Tytuł:
- Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
- Autorzy:
-
Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y. - Powiązania:
- https://bibliotekanauki.pl/articles/1194577.pdf
- Data publikacji:
- 2014-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.-c
78.66.-w
85.60.Dw - Opis:
- GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 2; 411-413
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł