- Tytuł:
- Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation
- Autorzy:
-
Stupakova, J.
Ašmontas, S.
Gradauskas, J.
Zagadskij, V.
Shatkovskis, E.
Sužiedėlis, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2047172.pdf
- Data publikacji:
- 2006-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.30.+q
78.55.Mb
85.30.De - Opis:
- Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
- Źródło:
-
Acta Physica Polonica A; 2006, 110, 6; 817-822
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł