- Tytuł:
- Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer
- Autorzy:
-
Nossarzewska-Orłowska, E.
Brzozowski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1929736.pdf
- Data publikacji:
- 1993-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Hx
81.60.-j - Opis:
- The photoluminescence properties of porous layers prepared by anodization of p/p$\text{}^{+}$ silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 4; 713-716
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł