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    Wyświetlanie 1-6 z 6
    Tytuł:
    Study of Blue Photoluminescent Band in ZnS Crystals
    Autorzy:
    Liem, N. Q.
    Quang, V. X.
    Thanh, D. X.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931824.pdf
    Data publikacji:
    1994-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.55.Et
    Opis:
    The zinc sulphide crystals as-grown and heat treated in different atmospheres, have been studied by photoluminescence technique. A blue emission band (IB) peaking at 2.91 eV has been identified in the mentioned crystals. Parameters of the IB band such as peak energy, half width of spectrum, lifetime of photoluminescence as well as a superlinearly excitation intensity dependence of the luminescence have been determined. A model of the IB transition is proposed to explain the properties and features of IB luminescence.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 6; 979-985
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Preheating Temperature on Microstructure and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Spin Coating Technique
    Autorzy:
    Ji, Qiang-min
    Wang, Ya-li
    Gao, Xiao-yong
    Gao, Hui
    Zhai, Yao-fei
    Powiązania:
    https://bibliotekanauki.pl/articles/1398971.pdf
    Data publikacji:
    2016-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.55.-m
    Opis:
    Highly-oriented ZnO thin films prepared by using low-cost technique such as sol-gel technique are of much importance to ZnO-based white light-emitting diodes. The chose of proper preheating temperature in sol-gel technique is still critical for highly-oriented ZnO thin film so far. The mechanisms for the preheating in the formation of ZnO thin film and for the reactions involved in the sol solution have not been clearly stated yet. Thus, in this work, the highly-oriented ZnO thin films were prepared on glass substrates by using sol-gel spin-coating technique. The sol solution was prepared by using the two-step method rather than usual one-step method, which facilitates the understanding of the mechanism for the reactions involved in the sol solution. The effect of the preheating temperature on the microstructure and the optical properties of the films were in particular investigated. The mechanisms for the preheating in the formation of the films and for the reactions involved in the sol solution prepared by the two-step method were also proposed in terms of the experimental results. The preheating not only enhances the volatilization of the solvent 2-methoxyethanol and the decomposition of the residual organic species, but also results into the formation of small number of ZnO particles. The preheating temperature of 300°C is most favorable for the highly-oriented ZnO thin film. Increasing the preheating temperature results into the blue shift of the absorption edges of the films. This can be explained by using the quantum-size effect. The photoluminescence spectra of the films show an UV emission at the near-band edge and a broad green-yellow emission at 470-620 nm. The former is closely related to the excitons, while the latter is to the intrinsic defect species in the film.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 6; 1191-1196
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Identification of the IB Emission Band in Al-Doped ZnS Crystals
    Autorzy:
    Liem, N. Q.
    Quang, V. X.
    Thanh, D. X.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945436.pdf
    Data publikacji:
    1996-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.55.Et
    Opis:
    Time-resolved luminescence spectroscopy and thermal lensing techniques are applied to the study of deep centre photoluminescence and absorption in Al-doped ZnS crystals, which are as-grown or heat treated in different Zn rich or S rich atmospheres. A blue emission band peaking at 2.89 eV has been identified as IB band in all the mentioned crystals. Parameters of the IB band at 300 K, 77 K and 10 K such as peak energy, half width of spectrum, radiative lifetime have been determined. The IB band exhibits some special properties such as a shift neither with increasing delay time nor with excitation intensity nor with sample temperatures as well as a superlinearly excitation intensity dependence of the luminescence. An energy diagram and electronic transitions in the IB centre are presented to explain the experimental results.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 5-6; 717-726
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
    Autorzy:
    Park, K.
    Hakeem, D.
    Kim, J.
    Kim, Y.
    Kim, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398243.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.55.Hx
    78.55.Et
    Opis:
    The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 902-906
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals
    Autorzy:
    Lieu, N. T. T.
    Dat, D. H.
    Liem, N. Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035657.pdf
    Data publikacji:
    2003-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.55.-m
    78.55.Et
    Opis:
    The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton-exciton collision and electron-hole plasma.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 1; 67-75
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Raman Spectra of CdTe/ZnTe Self Assembled Quantum Dots
    Autorzy:
    Romčević, N.
    Romčević, M.
    Kostić, R.
    Stojanović, D.
    Abolmasov, B.
    Karczewski, G.
    Galazka, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807840.pdf
    Data publikacji:
    2009-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.22.-m
    78.30.Fs
    78.55.Et
    Opis:
    In this paper we present Raman scattering and photoluminescence spectra measured on CdTe/ZnTe self assembled quantum dots. The photoluminescence spectrum has shown two main emission peaks, both connected with existing of quantum dots. One presents direct deexcitation to ground state and the other is optical phonon (οmega = 207.3 $cm^{-1}$)-assisted deexcitation. The registered multiphonon emission process depends on temperature. At low temperature phonon spectra shows line at 450 $cm^{-1}$ (TA + 2LO in ZnTe) and 595 $cm^{-1}$ (2LO + TO(Γ) in ZnTe).
    Źródło:
    Acta Physica Polonica A; 2009, 116, 1; 88-90
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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