Autor: Suffczyński, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Growth Break before Capping on Photoluminescence Dynamics of CdSe/ZnSe Self-Assembled Quantum Dots
Autorzy:: Nowak, S.
Suffczyński, J.
Goryca, M.
Kossacki, P.
Gaj, J.
Lee, S.
Furdyna, J.
Powiązania:: https://bibliotekanauki.pl/articles/1811967.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.67.Hc
81.07.Ta
Opis:: Influence of growth breaks before capping of CdSe self-assembled quantum dot layers on photoluminescence dynamics was examined in three samples. Short (5s) break resulted only in a small blue shift, caused probably by partial strain relaxation and/or Zn interdiffusion. Long (20 min) break induced a strong broadening and red shift of the spectra, combined with a dramatic slow down of the photoluminescence decays. The main result of the long break was identified as introduction of defects (impurities), which generate local electric fields and act as traps of photogenerated carriers.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1267-1271
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Inter-Dot Coupling in a Self-Assembled Quantum Dot System
Autorzy:: Kazimierczuk, T.
Nowak, S.
Suffczyński, J.
Wojnar, P.
Golnik, A.
Gaj, J. A.
Kossacki, P.
Powiązania:: https://bibliotekanauki.pl/articles/2047689.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
78.55.Et
Opis:: We present studies of resonant excitation of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation measurements revealed existence of sharp resonances, common for photoluminescence lines attributed to different quantum dot charge states. We conclude from the ensemble of photoluminescence and photoluminescence excitation results that we observe energy transfer in coupled quantum dot pairs.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 321-324
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Long Decays of Excitonic Photoluminescence from CdTe/ZnTe Individual Quantum Dots
Autorzy:: Piechal, B.
Suffczyński, J.
Trajnerowicz, A.
Goryca, M.
Kossacki, P.
Golnik, A.
Gaj, J. A.
Powiązania:: https://bibliotekanauki.pl/articles/2044525.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.47.+p
78.67.Hc
78.55.Et
Opis:: We present time-resolved micro-photoluminescence study of self-assembled CdTe/ZnTe quantum dots. In addition to the fast radiative decay of the exciton, we observe long components, being of the order of a few nanoseconds. We observe that long decays are present for neutral exciton lines as well as on the biexciton ones. The temperature dependent measurements reveal the non-monotonic behaviour. We find also that the long decays are not mono-exponential. We conclude that the dark exciton states cannot be treated as the only source of long decays in the luminescence. We propose other possible explanation, which is the slowing of luminescence by carrier trapping in high energy states in quantum dots and barriers.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 831-836
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Optical Properties of CdTe QDs in Proximity to a Surface
Autorzy:: Piwowar, J.
Papierska, J.
Sawicki, K.
Kobak, J.
Pacuski, W.
Golnik, A.
Kossacki, P.
Suffczyński, J.
Powiązania:: https://bibliotekanauki.pl/articles/1399085.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
78.55.Et
78.67.-n
78.47.-p
Opis:: Optical properties of CdTe/ZnTe quantum dots are studied as a function of a capping layer thickness by means of time-integrated and time-resolved microphotoluminescence. The samples are grown by MBE and covered with 10 nm and 100 nm capping layer. Despite that the proximity of the surface may result in an enhanced rate of non-radiative processes limiting the quantum dots optical performance, the set of results indicates that reduction of the capping layer thickness down to 10 nm has no effect on the quantum dot emission intensity and decay rate, contrary to the previously reported case of InAs/GaAs quantum dots.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 795-797
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Excitation Mechanisms of CdTe/ZnTe Quantum Dots under Non-Resonant and Quasi-Resonant Regime
Autorzy:: Kazimierczuk, T.
Gaj, J. A.
Golnik, A.
Goryca, M.
Nawrocki, M.
Koperski, M.
Smoleński, T.
Suffczyński, J.
Wojnar, P.
Kossacki, P.
Powiązania:: https://bibliotekanauki.pl/articles/2047917.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
78.55.Et
Opis:: We discuss possible mechanisms of quantum dot population control. A set of experiments, including time-resolved photoluminescence, single photon correlations, excitation correlation, and photoluminescence excitation is used to determine the actual mechanism under non-resonant and quasi-resonant regime.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 588-591
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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