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Wyszukujesz frazę "Ivanov, I." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
Autorzy:
Gronin, S.
Sorokin, S.
Kazanov, D.
Sedova, I.
Klimko, G.
Evropeytsev, E.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1376051.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
78.55.Et
78.67.Hc
68.65.Fg
Opis:
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1096-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Micro-photoluminescence studies of CdSe/ZnSe quantum dot structures grown under different conditions
Autorzy:
Rakhlin, M.
Sorokin, S.
Sedova, I.
Usikova, A.
Gronin, S.
Belyaev, K.
Ivanov, S.
Toropov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1156645.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Hb
78.55.Et
81.07.Ta
Opis:
We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-117-A-119
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping
Autorzy:
Gronin, S.
Sorokin, S.
Sedova, I.
Kop'ev, P.
Ivanov, S.
Zverev, M.
Gamov, N.
Peregoudov, D.
Studionov, V.
Powiązania:
https://bibliotekanauki.pl/articles/1811929.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Hc
Opis:
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1115-1122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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