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Wyświetlanie 1-15 z 87
Tytuł:
Study of Blue Photoluminescent Band in ZnS Crystals
Autorzy:
Liem, N. Q.
Quang, V. X.
Thanh, D. X.
Powiązania:
https://bibliotekanauki.pl/articles/1931824.pdf
Data publikacji:
1994-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Et
Opis:
The zinc sulphide crystals as-grown and heat treated in different atmospheres, have been studied by photoluminescence technique. A blue emission band (IB) peaking at 2.91 eV has been identified in the mentioned crystals. Parameters of the IB band such as peak energy, half width of spectrum, lifetime of photoluminescence as well as a superlinearly excitation intensity dependence of the luminescence have been determined. A model of the IB transition is proposed to explain the properties and features of IB luminescence.
Źródło:
Acta Physica Polonica A; 1994, 86, 6; 979-985
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of the IB Emission Band in Al-Doped ZnS Crystals
Autorzy:
Liem, N. Q.
Quang, V. X.
Thanh, D. X.
Powiązania:
https://bibliotekanauki.pl/articles/1945436.pdf
Data publikacji:
1996-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Et
Opis:
Time-resolved luminescence spectroscopy and thermal lensing techniques are applied to the study of deep centre photoluminescence and absorption in Al-doped ZnS crystals, which are as-grown or heat treated in different Zn rich or S rich atmospheres. A blue emission band peaking at 2.89 eV has been identified as IB band in all the mentioned crystals. Parameters of the IB band at 300 K, 77 K and 10 K such as peak energy, half width of spectrum, radiative lifetime have been determined. The IB band exhibits some special properties such as a shift neither with increasing delay time nor with excitation intensity nor with sample temperatures as well as a superlinearly excitation intensity dependence of the luminescence. An energy diagram and electronic transitions in the IB centre are presented to explain the experimental results.
Źródło:
Acta Physica Polonica A; 1996, 89, 5-6; 717-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Preheating Temperature on Microstructure and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Spin Coating Technique
Autorzy:
Ji, Qiang-min
Wang, Ya-li
Gao, Xiao-yong
Gao, Hui
Zhai, Yao-fei
Powiązania:
https://bibliotekanauki.pl/articles/1398971.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.55.-m
Opis:
Highly-oriented ZnO thin films prepared by using low-cost technique such as sol-gel technique are of much importance to ZnO-based white light-emitting diodes. The chose of proper preheating temperature in sol-gel technique is still critical for highly-oriented ZnO thin film so far. The mechanisms for the preheating in the formation of ZnO thin film and for the reactions involved in the sol solution have not been clearly stated yet. Thus, in this work, the highly-oriented ZnO thin films were prepared on glass substrates by using sol-gel spin-coating technique. The sol solution was prepared by using the two-step method rather than usual one-step method, which facilitates the understanding of the mechanism for the reactions involved in the sol solution. The effect of the preheating temperature on the microstructure and the optical properties of the films were in particular investigated. The mechanisms for the preheating in the formation of the films and for the reactions involved in the sol solution prepared by the two-step method were also proposed in terms of the experimental results. The preheating not only enhances the volatilization of the solvent 2-methoxyethanol and the decomposition of the residual organic species, but also results into the formation of small number of ZnO particles. The preheating temperature of 300°C is most favorable for the highly-oriented ZnO thin film. Increasing the preheating temperature results into the blue shift of the absorption edges of the films. This can be explained by using the quantum-size effect. The photoluminescence spectra of the films show an UV emission at the near-band edge and a broad green-yellow emission at 470-620 nm. The former is closely related to the excitons, while the latter is to the intrinsic defect species in the film.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1191-1196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near-Band-Edge Photoluminescence from Very High Quality Hexagonal ZnO Bulk Crystals
Autorzy:
Lieu, N. T. T.
Dat, D. H.
Liem, N. Q.
Powiązania:
https://bibliotekanauki.pl/articles/2035657.pdf
Data publikacji:
2003-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.55.-m
78.55.Et
Opis:
The near-band-edge photoluminescence spectra of very high quality hexagonal ZnO single crystals in the temperature range between 9 and 305 K were measured. Based on the energetic positions and the evolutions of well-resolved photoluminescence lines with temperature and with excitation power density we interpret the observed photoluminescence lines as resulting from recombination of the free-exciton, bound-exciton, biexciton, inelastic exciton-exciton collision and electron-hole plasma.
Źródło:
Acta Physica Polonica A; 2003, 103, 1; 67-75
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
Autorzy:
Park, K.
Hakeem, D.
Kim, J.
Kim, Y.
Kim, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398243.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
78.55.Et
Opis:
The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 902-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface-Coated CdS Nanocrystals
Autorzy:
Fernandez, J.
de Souza-Parise, M.
Morais, P.
Powiązania:
https://bibliotekanauki.pl/articles/1399521.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.40.Fy
78.55.Et
78.67.Bf
78.70.Ck
Opis:
CdS nanocrystals were prepared using a standard colloidal route (co-precipitation chemical reaction) whereas modulation of the optical and structural properties was realized via surface coating the nanocrystals with ethylene glycol molecules using an in situ procedure. The as-produced nanocrystals were characterized by X-ray diffraction, Raman spectroscopy, UV-absorption measurements and photoluminescence. The nanocrystal quality was revealed by the spectroscopic data, though the final product presents a mixture of both zinc blende (cubic) and wurtzite (hexagonal) phases. The X-ray data indicated that the concentration of the ethylene glycol used during the synthesis process modulates the nanocrystal size and the crystal phase of the end material.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 108-111
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Transfer States of Transition Metal and Rare Earth Ions: Their Role in Recombination Processes
Autorzy:
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929777.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.55.Cr
78.55.Et
Opis:
Center ionization accompanied by carrier localization at the center by virtue of a short-range or a long-range Coulomb attractive potential is discussed. The role of charge transfer states in recombination processes is described. The source of carrier attractive potential is explained and a simple theoretical model is presented allowing to predict the nature (either electron or hole attractive) of this potential. The probability of different possible recombination paths is also analyzed.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 849-855
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ionization Energies of RE Ions in wide Bandgap Sulphides
Autorzy:
Świątek, K.
Godlewskl, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879958.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.55.Et
Opis:
An analysis of rare earth (RE) energy level positions in wide bandgap sulphides is presented. It is shown that the Jörgensen's refined spin-pairing energy theory (RESPET) predicts correctly the photo-ionization (PI) energy of Sm in ZnS.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 247-250
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of ZnCoO Films and Nanopowders
Autorzy:
Wolska, E.
Łukasiewicz, M.
Fidelus, J.
Łojkowski, W.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791349.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
78.55.Et
81.07.Wx
61.72.uf
78.66.Hf
Opis:
ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either atomic layer deposition or by a microwave driven hydrothermal method. We report that doping with cobalt quenches a visible photoluminescence of ZnO. We could observe a visible photoluminescence of ZnO only for samples with very low Co fractions (up to 1%). Mechanisms of photoluminescence quenching in ZnCoO are discussed. We also found that ZnO films remained n-type conductive after doping with Co, indicating that a high electron concentration and cobalt 2+ charge state can coexist.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 918-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Light Emission in CdMnS Nanoparticles
Autorzy:
Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Klar, P. J.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/2043717.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
78.55.Et
78.47.+p
71.55.Gs
76.30.Fc
76.70.Hb
Opis:
We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn$\text{}^{2+}$ intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn$\text{}^{2+}$ intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 681-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photo-ESR Studies of Ni doped ZnS and ZnSe
Autorzy:
Surma, M.
Zakrzewski, A. J.
Godlewski, M.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1932084.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.He
78.55.Et
Opis:
The results of electron spin resonance experiments are presented for nickel doped ZnS and ZnSe. Energy level position of Ni$\text{}^{1+}$ state in band gap of ZnS and ZnSe is determined. The nonradiative recombination processes of donor-acceptor pairs in Ni doped samples are discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 221-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nature of Blue Anti-Stokes Luminescence in ZnSe:Cr
Autorzy:
Ivanov, V. Yu.
Semenov, Yu. G.
Surma, M.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933759.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Fc
71.55.Gs
78.55.Et
Opis:
The mechanism of the anti-Stokes photoluminescence in ZnSe:Cr is discussed. It is shown that the two-step ionization transitions of Cr(2$\text{}^{+}$ ↔ 1$\text{}^{+}$) result in appearance of the blue anti-Stokes photoluminescence of ZnSe:Cr. There are also some indications that the Auger type co-operative process can contribute to the photoluminescence excitation.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 743-746
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Nature of Eu-Related Emissions in ZnS and CaS
Autorzy:
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879960.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
71.35.+z
78.55.Et
Opis:
The Eu-connected recombination processes in ZnS and CaS are analyzed on the basis of optical studies. A new Eu-related emission in ZnS is attributed to the recombination of an exciton bound at the Eu$\text{}^{2+}$ center, while in CaS the emission is dominated by the direct Eu$\text{}^{2+}$ intra-ion transition.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 255-257
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Compensation Models in Chlorine Doped CdTe Based on Positron Annihilation and Photoluminescence Spectroscopy
Autorzy:
Stadler, W.
Hofmann, D. M.
Meyer, B. K.
Krause-Rehberg, R.
Polity, A.
Abgarjan, Th.
Salk, M.
Benz, K. W.
Azoulay, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934007.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.70.Bj
78.55.Et
Opis:
In this investigation positron annihilation, photoluminescence and electron paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explained by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electron paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 921-924
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rare-Earth Excitation Mechanism in Wide Band Gap H-VI Compounds
Autorzy:
Karpińska, K.
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929798.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.55.Et
Opis:
The excitation mechanism of rare-earth emission in Eu and Ce doped CaS and SrS is studied. It is proposed that the Eu and probably also Ce emission is induced by the photoionization transition of the rare-earth ion, which is followed by the carrier trapping via the excited state of the ion. At increased temperatures the efficiency of excitation is reduced. We explain this effect by the carrier emission from the excited core state of the rare-earth ion to the continuum of the conduction (valence) band states. It is also suggested that the charge transfer state of the rare-earth ion may act as the intermediate state in the carrier trapping.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 959-962
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 87

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