Autor: Toropov, A. A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
Autorzy:: Mukhin, M.
Terent'ev, Ya.
Golub, L.
Nestoklon, M.
Meltser, B.
Semenov, A.
Solov'ev, V.
Sitnikova, A.
Toropov, A.
Ivanov, S.
Powiązania:: https://bibliotekanauki.pl/articles/1492858.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.75.-c
71.70.Ej
78.55.Cr
78.67.Hc
78.20.Ls
75.40.Mg
Opis:: Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 868-869
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Autorzy:: Shevchenko, E.
Toropov, A.
Nechaev, D.
Jmerik, V.
Shubina, T.
Ivanov, S.
Yagovkina, M.
Pozina, G.
Bergman, J.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1376069.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.De
78.55.Cr
71.35.-y
78.66.-w
Opis:: We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1140-1142
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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