Autor: Ivanov, A.V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
Autorzy:: Mizerov, A.
Jmerik, V.
Kaibyshev, V.
Komissarova, T.
Masalov, S.
Sitnikova, A.
Ivanov, S.
Powiązania:: https://bibliotekanauki.pl/articles/1811962.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
81.05.Ea
81.15.Hi
Opis:: The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature $T_S$ ≈ 760°C and Ga to activated nitrogen flux ratio $F_Ga//F_N^\ast$ ≈ 1.8.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1253-1258
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
Autorzy:: Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
Powiązania:: https://bibliotekanauki.pl/articles/2044535.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn
Opis:: We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
Autorzy:: Mukhin, M.
Terent'ev, Ya.
Golub, L.
Nestoklon, M.
Meltser, B.
Semenov, A.
Solov'ev, V.
Sitnikova, A.
Toropov, A.
Ivanov, S.
Powiązania:: https://bibliotekanauki.pl/articles/1492858.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.75.-c
71.70.Ej
78.55.Cr
78.67.Hc
78.20.Ls
75.40.Mg
Opis:: Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 868-869
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Autorzy:: Shevchenko, E.
Toropov, A.
Nechaev, D.
Jmerik, V.
Shubina, T.
Ivanov, S.
Yagovkina, M.
Pozina, G.
Bergman, J.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1376069.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.De
78.55.Cr
71.35.-y
78.66.-w
Opis:: We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1140-1142
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
Autorzy:: Ivanov, V.
Godlewski, M.
Miasojedovas, S.
Juršėnas, S.
Kazlauskas, K.
Žukauskas, A.
Skierbiszewski, C.
Siekacz, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Grzegory, I.
Powiązania:: https://bibliotekanauki.pl/articles/1179597.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:: We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 225-229
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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