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Wyszukujesz frazę "Porowski, S." wg kryterium: Wszystkie pola

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers
    Autorzy:
    Korona, K. P.
    Borysiuk, J.
    Skierbiszewski, C.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047384.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    72.20.Jv
    78.55.Cr
    Opis:
    We present time-resolved photoluminescence measurements of GaN/AlGaN low dimensional structures showing very characteristic changes of dynamics related to strong electric field. Strong piezoelectric and spontaneous polarizations built-in in nitride structures lead to the changes in spatial separation of carriers which leads to changes in recombination energies and radiative lifetimes of the carriers. The observed effect can be well described by a simple exponential relation. The observed dependence can be explained by an approximated model of quantum-confined Stark effect based on the Airy functions.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 243-247
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Application of High Pressure in Physics and Technology of III-V Nitrides
    Autorzy:
    Grzegory, I.
    Leszczyński, M.
    Krukowski, S.
    Perlin, P.
    Suski, T.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030388.pdf
    Data publikacji:
    2001-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.-h
    78.66.Fd
    73.61.Ey
    82.60.Lf
    78.55.Cr
    Opis:
    Due to high bonding energy of N$\text{}_{2}$ molecule, the III-V semiconducting nitrides, especially GaN and InN require high N$\text{}_{2}$ pressure to be stable at high temperatures necessary for growth of high quality single crystals. Physical properties of GaN-Ga(l)-N$\text{}_{2}$ system are discussed in the paper. On the basis of the experimental equilibrium p-T-x data and the quantum-mechanical modeling of interaction of N$\text{}_{2}$ molecule with liquid Ga surface, the conditions for crystallization of GaN were established. The crystals obtained under high pressure are of the best structural quality, having dislocation density as low as 10-100 cm$\text{}^{-2}$ which is several orders of magnitude better than in any other crystals of GaN. The method allows to grow both n-type substrate crystals for optoelectronics and highly resistive crystals for electronic applications. The physical properties of the pressure grown GaN measured to characterize both point defects and extended defects in the crystal lattice are discussed in the paper. A special attention is paid to the application of high pressure to reveal the nature of the point defects in the crystals and electric fields in GaN-based quantum structures. Due to their very high structural quality, the pressure grown crystals are excellent substrates for epitaxial growth of quantum structures. It opens new possibilities for optoelectronic devices, especially short wavelength high power lasers and efficient UV light emitting diodes. This is due to the strong reduction in dislocation densities in relation to existing structures (10$\text{}^{6}$-10$\text{}^{8}$ cm$\text{}^{-2}$) which are grown on strongly mismatched sapphire and SiC substrates. The experimental results on the epitaxial growth and physical properties of GaN-based device structures supporting above conclusions are discussed in the paper. The current development of blue laser technology in High Pressure Research Center is shortly reviewed.
    Źródło:
    Acta Physica Polonica A; 2001, 100, Supplement; 57-109
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Two-Electron Transition in Homoepitaxial GaN Layers
    Autorzy:
    Fiorek, A.
    Baranowski, J. M.
    Wysmołek, A.
    Pakuła, K.
    Wojdak, M.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968067.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    Opis:
    It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 742-744
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers
    Autorzy:
    Korona, K. P.
    Baranowski, J. M.
    Pakuła, K.
    Monemar, B.
    Bergman, J. P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968240.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.47.+p
    78.55.Cr
    Opis:
    Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 841-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
    Autorzy:
    Pakula, K.
    Baranowski, J. M.
    Stępniewski, R.
    Wysmołek, A.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Sawicki, M.
    Starowieyski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933937.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    Opis:
    The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 861-864
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Coupling of LO Phonons to Excitons in GaN
    Autorzy:
    Wysmołek, A.
    Łomiak, P.
    Baranowski, J. M.
    Pakuła, K.
    Stępniewski, R.
    Korona, K. P.
    Grzegory, I.
    Boćkowski, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952430.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    63.20.Mt
    71.55.Eq
    Opis:
    The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 981-984
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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