- Tytuł:
- Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy
- Autorzy:
-
Kaczor, P.
Ashwin, M. J.
Dobosz, D.
Żytkiewicz, Z. R.
Newman, R. C.
Dobaczewski, L. - Powiązania:
- https://bibliotekanauki.pl/articles/1951990.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.30.Fs
63.20.Pw
61.72.-y - Opis:
- Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si$\text{}_{Ga}$ donors, Si$\text{}_{As}$ acceptors and Si$\text{}_{Ga}$-Si$\text{}_{As}$ pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm$\text{}^{-1}$ are discussed in relation to possible perturbations of the lines from Si$\text{}_{Ga}$ or Si$\text{}_{As}$. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 865-868
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł