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Wyświetlanie 1-2 z 2
Tytuł:
Raman Spectroscopic Evidence of a Coherent Room Temperature Hybrid Structure of $BaTiO_3$ Single Crystal
Autorzy:
Liarokapis, E.
Antonakos, A.
Kojima, A.
Yoshimura, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1807818.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
77.80.Dj
63.50.-x
Opis:
Recently, a precession X-ray study has discovered that ferroelectric $BaTiO_3$ single crystals have a coherent hybrid structure that consists of tetragonal and monoclinic lattices that share the (101) face of the tetragonal [11, 12]. Microscopic observations attest that the single crystal has two kinds of stripes (dark and white regions). Raman spectra of all sides of the cubic crystal have been collected at several scattering configurations. Two kinds of domains have been observed by the Raman measurements within the stripes, which are identified as light and dark spots under the optical microscope. The spectra structures and line widths are strongly affected when the laser direction is parallel to the b-axes and the polarization parallel to the a- or c-axes of the 90° domain (ac-side). It appears that there is a symmetry reduction and disorder, which affects the Raman active phonons. The results are in agreement with the coexistence of the two (tetragonal and monoclinic) lattices.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 68-71
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
Autorzy:
Rawski, M.
Żuk, J.
Kulik, M.
Droździel, A.
Lin, L.
Prucnal, S.
Pyszniak, K.
Turek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504145.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
78.30.-j
61.05.Np
63.50.-x
79.20.Rf
81.70.Fy
Opis:
Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 192-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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