Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "81.15.Ef" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-2 z 2
    Tytuł:
    Effect of Zinc Incorporation in $CuInS_{2}$ Thin Films Grown by Vacuum Evaporation Method
    Autorzy:
    Ben Rabeh, M.
    Kanzari, M.
    Rezig, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808116.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    78.20.Ci
    81.15.Ef
    73.61.Le
    Opis:
    Structural, optical and electrical properties of Zn-doped $CuInS_2$ thin films grown by double source thermal evaporation method were studied. Evaporated thin films were grown from $CuInS_2$ powder by vacuum evaporation using resistively heated tungsten boats. The element Zn was evaporated from a thermal evaporation source. The amount of the Zn source was determined to be 0-4% molecular weight compared with $CuInS_2$ source. The effects of Zn on films properties were investigated using X-ray diffraction, optical transmission and reflection spectra. The films were annealed in vacuum at 260°C for 2 h. The Zn-doped samples have band-gap energy of 1.474-1.589 eV. We found that the Zn-doped $CuInS_2$ thin films exhibit p-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate $CuInS_2$-based solar cells.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 699-703
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Low Temperature Annealing on Microstructural and Optical Properties of $(BaTiO_3)_{0.84}(CeO_2)_{0.16}$ Thin Films
    Autorzy:
    Dughaish, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400390.pdf
    Data publikacji:
    2013-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    77.55.F-
    78.20.Ci
    78.66.-w
    81.15.-z
    81.40.Ef
    81.70.Fy
    Opis:
    $(BaTiO_3)_{0.84}(CeO_2)_{0.16}$ thin films were prepared by electron beam evaporation method. X-ray diffraction and scanning electron microscopy revealed the amorphous structure for the as-prepared films. The thin films were annealed at temperatures: 200, 300, 400 and 500C for 1 h in air. Small and low intensity crystalline peaks were observed at annealing temperature of 200C for 1 h. The intensity and the number of the crystalline peaks were increased with increasing annealing temperature. Nanocrystals, of dimensions in the range 60-76 nm, were obtained when the annealing was performed at 500°C. The indexed diffraction pattern of the annealed thin film revealed a monoclinic structure. A two-layer model was used to describe the experimental ellipsometric data. The Bruggeman effective medium approximation was used to describe the surface roughness layer and the Cauchy dispersion relation was used to describe the main $(BaTiO_3)_{0.84}(CeO_2)_{0.16}$ layer. The optical constants of the thin films over 300-1100 nm spectral range were measured. The optical band gap showed gradual decrease with the annealing temperature. The accurate determination of the optical constants of the thin films is very useful and should be taken into consideration in the design of devices using optical thin films technology.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 1; 87-91
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies