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    Wyświetlanie 1-9 z 9
    Tytuł:
    Synthesis and Luminescent Properties of $Eu^{3+}$ Doped Crystalline Diphosphate $Na_2ZnP_2O_7$
    Autorzy:
    Guerbous, L.
    Gacem, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1418919.pdf
    Data publikacji:
    2012-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.55.-m
    78.55.Hx
    Opis:
    Undoped and $Eu^{3+}$-doped disodium zinc diphosphate $Na_2ZnP_2O_7$ (NZPO) single crystals are grown by the Czochralski method. X-ray diffraction, Fourier transform infrared and Raman techniques were used to check the crystallographic structure. Excitation and emission spectra were measured at room temperature and studied. The $Eu^{3+}$ ions occupy a non-centrosymmetric site with different coordination number. Very efficient energy transfer from $O-Eu^{3+}$ band state to $Eu^{3+}$ excited energy levels is highlighted.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 3; 535-538
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Radiative Donor-Acceptor Pair Recombination in $Tl_2Ga_2Se_3S$ Layered Single Crystals
    Autorzy:
    Gasanly, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400493.pdf
    Data publikacji:
    2013-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.20.-e
    71.55.-i
    Opis:
    The emission band spectra of $Tl_2Ga_2Se_3S$ layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW $cm^{-2}$ range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level $E_{d}$=270 meV to the shallow acceptor level $E_{a}$=10 meV were suggested to be responsible for the observed photoluminescence band.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 1; 128-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
    Autorzy:
    Wysmołek, A.
    Baranowski, J. M.
    Kamińska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934050.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.20.-e
    78.60.Kn
    Opis:
    We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 957-960
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stokes Shift and Band Gap Bowing in $In_xGa_{1-x}N$ (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy
    Autorzy:
    Yildiz, A.
    Dagdelen, F.
    Aydogdu, Y.
    Acar, S.
    Lisesivdin, S.
    Kasap, M.
    Bosi, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813499.pdf
    Data publikacji:
    2008-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.-r
    78.20.-e
    78.40.Fy
    78.55.-m
    Opis:
    We presented the results of electrical and optical studies of the properties of $In_xGa_{1-x}N$ epitaxial layers (0.060≤x≤0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for $In_xGa_{1-x}N$ alloys is well fitted with a bowing parameter of≈3.6 eV.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 2; 731-739
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Band Structure and Optical Properties οf the Layered $Hg_{3}TeCl_{4}$ Crystal
    Autorzy:
    Sznajder, M.
    Bercha, D.
    Potera, P.
    Khachapuridze, A.
    Panko, V.
    Bercha, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791361.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.40.-q
    78.55.-m
    71.20.-b
    Opis:
    First experimental investigations on absorption and photoluminescence of the novel $Hg_{3}TeCl_{4}$ monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the $Hg_{3}TeCl_{4}$ crystal confirmed that $Hg_{3}TeCl_{4}$ is a wide-band-gap photoconductor ($E_{g}$ = 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 950-951
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy
    Autorzy:
    Böttcher, T.
    Einfeldt, S.
    Figge, S.
    Kirchner, V.
    Hommel, D.
    Selke, H.
    Ryder, P. L.
    Bertram, F.
    Riemann, T.
    Christen, J.
    Lunz, U.
    Becker, C. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969025.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Dv
    68.65.+g
    78.20.-e
    78.55.-m
    78.55.Cr
    Opis:
    The luminescence of In$\text{}_{x}$Ga$\text{}_{1-x}$N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 260-264
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Physical Properties of the $(Ga_{70}La_{30})_2 S_{300}$, $(Ga_{69.75}La_{29.75}Er_{0.5})_2 S_{300}$ Single Crystals
    Autorzy:
    Ivashchenko, I.
    Halyan, V.
    Kevshyn, A.
    Kubatska, T.
    Rosolovska, V.
    Tishchenko, P.
    Olekseyuk, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398228.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    71.20.Eh
    78.20.-e
    78.55.-m
    Opis:
    Using solution-melt method two single crystals, $ (Ga_{70}La_{30})_2 S_{300}$, $(Ga_{69.75}La_{29.75}Er_{0.5})_2 S_{300}$, were grown. The maxima of the luminescent radiation in the photoluminescence spectrum of the $(Ga_{69.75}La_{29.75}Er_{0.5})_2S_{300} $ single crystal correspond to the intracentric transitions in the erbium ions: $\text{}^2 H_{11//2}→ \text{}^4 I_{15//2} (525 nm) and \text{}^4 S_{3//2} → \text{}^4 I_{15//2}$ (545 nm).
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 994-996
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitation and Temperature Tuned Photoluminescence in Tl$\text{}_{2}$In$\text{}_{2}$S$\text{}_{3}$Se Layered Crystals
    Autorzy:
    Guler, I.
    Goksen, K.
    Gasanly, N. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047173.pdf
    Data publikacji:
    2006-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.-b
    71.20.Nr
    78.20.-e
    78.55.-m
    Opis:
    Photoluminescence spectra of Tl$\text{}_{2}$In$\text{}_{2}$S$\text{}_{3}$Se layered single crystals have been studied in the wavelength region of 535-725 nm and in the temperature range of 22-58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 516 mW cm$\text{}^{-2}$. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.02 and 0.01 eV below the bottom of conduction band to acceptor levels located 0.05 and 0.44 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the photoluminescence spectra, respectively.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 6; 823-831
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet
    Autorzy:
    Wiśniewski, K.
    Koepke, Cz.
    Wojtowicz, A. J.
    Drozdowski, W.
    Grinberg, M.
    Kaczmarek, S. M.
    Kisielewski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2007834.pdf
    Data publikacji:
    1999-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    78.55.-m
    78.60.Kn
    73.50.Gr
    29.40.Mc
    78.20.-e
    78.20.Wc
    78.40.-q
    Opis:
    In this paper we report preliminary results of optical studies on Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) crystals codoped with Ce and Mg. By using measurements of luminescence, absorption, and luminescence excitation spectra we demonstrate that although the basic features introduced to the YAG host by the Ce-doping remain intact, the Mg-codoping imposes some significant changes on other properties of the material. These changes are potentially important for laser and/or scintillator applications of YAG:Ce and are due, most likely, to modifications of defect populations in the material. We characterize them by using the techniques of thermoluminescence and excited state absorption under excimer laser pumping. These techniques, interestingly, yield results that seem inconsistent. While the thermoluminescence signal of the Mg-doped sample is strongly reduced, suggesting that trap concentrations in the presence of Mg are suppressed, the excited state absorption signal, which we also relate to the traps, is higher. We offer a tentative explanation of this contradiction between the two experiments that involves a massive transfer of electrons from the Mg-related defects to the excited state absorption centers caused by the excimer pump itself.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 3; 403-412
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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