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Wyszukujesz frazę "68.55.-a" wg kryterium: Temat


Wyświetlanie 1-8 z 8
Tytuł:
Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering
Autorzy:
Iljinas, A.
Burinskas, S.
Dudonis, J.
Powiązania:
https://bibliotekanauki.pl/articles/1503904.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.55.-a
78.20.-e
Opis:
In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 60-62
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films
Autorzy:
Rusu, D.
Rusu, G.
Luca, D.
Powiązania:
https://bibliotekanauki.pl/articles/1505094.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.hf
68.55.-a
68.55.J-
81.15.Aa
78.20.-e
Opis:
Zinc oxide (ZnO) thin films (with thickness ranged from 780 nm to 1150 nm) were prepared by thermal oxidation in air (at 600-700 K, for 20-30 min) of vacuum evaporated metallic zinc films. The Zn films were deposited on glass substrates at room temperature. The crystalline structure of ZnO thin film samples was investigated using X-ray diffraction technique. The diffraction patterns revealed that the ZnO thin films were polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to substrate surface. Some important structural parameters (lattice parameters of the hexagonal cell, crystallite size, Zn-O bond length, residual stress, etc.) of the films were determined. The surface morphology of the prepared ZnO thin films, investigated by atomic force microscopy, revealed a uniform columnar structure. The spectral dependence of transmission coefficient has been studied in the wavelength range from 300 nm to 1700 nm. The optical energy band gap calculated from the absorption spectra (supposing allowed direct band-to-band transitions) are in the range 3.17-3.19 eV. The dependence of the microstructural and optical characteristics on the preparation conditions (oxidation temperature, oxidation time, etc.) of the oxidized zinc films is discussed.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 850-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition
Autorzy:
Göde, F.
Yavuz, F.
Kariper, İ.
Powiązania:
https://bibliotekanauki.pl/articles/1401980.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ps
68.55.-a
78.20.-e
73.61.Ga
Opis:
Lead sulfide thin films are deposited on glass substrates at room temperature for 2 h by chemical bath deposition. The structure, surface morphology, optical and electrical properties of the thin films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and the Hall effect measurements. The obtained films show the formation of well crystallized PbS with a cubic rock salt structure and with the preferential orientation (111) plane. The lattice parameter and crystallite size of the films are found as a=600 Å and 62 nm from the X-ray reflectivity data from the atomic force microscopy image, respectively. The band gap width of the films is determined as 2.84 eV. The optical parameters of the films such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant are evaluated. Moreover, from the Hall measurements, electrical resistivity, conductivity carrier mobility, and carrier concentration of the films are determined as 3.722 Ω m, 0.268 Ω¯¹ m¯¹, 8.486× 10¯¹ m² V¯¹ s¯¹, and $1.976 \times 10^{18} m^{-3}$, respectively.
Źródło:
Acta Physica Polonica A; 2015, 128, 2B; B-215-B-218
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of Antireflection Structures as a Protective Layer of Solar Cells with Nanoporous Silica Films and Nanoimprinted Moth-Eye Structure
Autorzy:
Kim, K.
Han, J.
Jang, J.
Choi, C.
Choi, S.
Kim, C.
Kye, H.
Cheong, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492625.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.-w
68.37.-d
68.55.-a
78.20.-e
Opis:
The antireflection structures are fabricated by sol-gel process as a protective layer of solar cells and by hot embossing process with anodized aluminum oxide membrane template on polycarbonate film. The optical properties and morphology of the antireflection structures are analyzed by UV-visible spectroscopy and field emission scanning electron microscopy, respectively. The total conversion efficiency of a polycrystalline Si solar cell module with the protective layer, sol-gel-derived nanoporous antireflection structure, is increased by 2.6% and 5.7% for one-side antireflection coated prismatic matt glass and both-side antireflection coated prismatic matt glass, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-047-A-049
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Transparent and Nanocrystalline $TiO_{2}:Nd$ Thin Films Prepared by Magnetron Sputtering
Autorzy:
Domaradzki, J.
Wojcieszak, D.
Prociow, E.
Kaczmarek, D.
Powiązania:
https://bibliotekanauki.pl/articles/1807648.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Rx
68.55.-a
68.60.-p
68.60.Dv
78.20.-e
Opis:
In this work structural and optical properties of $TiO_{2}$ thin films doped with different amount of Nd have been outlined. The result have shown that by quantity of Nd amount in the film dense nanocrystalline or amorphous thin films were obtained.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-75-S-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Five-Layered ZrO₂ and Single-Layered Ce, Eu, and Dy-Doped ZrO₂ Thin Films Prepared by Sol-Gel Spin Coating Method
Autorzy:
Çiçek Bezir, N.
Evcin, A.
Kayali, R.
Özen, M.
Esen, K.
Powiązania:
https://bibliotekanauki.pl/articles/1031178.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.-d
68.55-a
68.60-p
78.20.-e
81.10.Dn
71.20.Be
Opis:
In order to investigate the influence of the number of layers on the properties of ZrO₂ thin films, we prepared one pure ZrO₂ film sample with five layers and Ce, Eu, and Dy-doped ZrO₂ samples with single layer, by spin-coating sol gel-method. The crystal structures of thin films were determined using X-ray diffraction, morphology of the samples was analyzed by scanning electron microscopy, and the optical properties of the samples were determined by ultraviolet/visible absorbance measurements. The results of these measurements have shown that the concentration of the dopants and the thickness of thin film layers play a vital role in the physical, chemical, and optical properties of the pure and doped ZrO₂ thin films.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 612-616
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Pure and Doped TiO₂ Thin Films Prepared by Sol-Gel Spin-Coating Method
Autorzy:
Çiçek Bezir, N.
Evcin, A.
Kayali, R.
Özen, M.
Balyaci, G.
Powiązania:
https://bibliotekanauki.pl/articles/1031525.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.-d
68.55.-a
68.60.-p
78.20.-e
81.10.Dn
71.20.Be
Opis:
In this study, using spin-coating sol-gel method we fabricated TiO₂ thin films, doped with different concentrations (1, 2, and 3 mole %) of Ce, Dy, and Eu. Characterization of the prepared samples was performed by means of the X-ray diffraction, scanning electron microscopy, ultraviolet visible absorption, and differential thermal and thermo gravimetric analysis. X-ray diffraction measurements have shown that in Eu and Dy-doped samples crystal structure consists of mixed rutile and the dominant anatase phases, however the Ce doped samples consist of anatase phase only. Scanning electron microscopy images have revealed that while average thin film thickness of the Dy-doped samples decreases with increasing concentration of Dy, the average film thicknesses of samples doped with Ce and Eu increases with increasing concentrations of these dopants. Ultraviolet visible absorption spectroscopy measurements have shown that while absorbances of the samples doped by 1 and 2 mole % of the dopants have nearly similar properties, these properties differ from each other for 3 mole % of the dopants. Finally, differential thermal and thermo gravimetric analyses have shown that the chemical reactions and weight losses of the samples have occurred at the expected temperatures.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 620-624
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near IR Refractive Index for GaInN Heavily Doped with Silicon
Autorzy:
Cywiński, G.
Kudrawiec, R.
Rzodkiewicz, W.
Kryśko, M.
Litwin-Staszewska, E.
Misiewicz, J.
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1791356.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.66.Fd
81.15.Hi
68.55.-a
78.20.-e
Opis:
The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 936-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

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