- Tytuł:
- Defects in Dilute Nitrides
- Autorzy:
-
Chen, W. M.
Buyanova, I. A.
Tu, C. W.
Yonezu, H. - Powiązania:
- https://bibliotekanauki.pl/articles/2043705.pdf
- Data publikacji:
- 2005-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Ji
71.55.Eq
76.70.Hb - Opis:
- We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As$\text{}_{a}$ antisites and Ga$\text{}_{i}$ self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.
- Źródło:
-
Acta Physica Polonica A; 2005, 108, 4; 571-579
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł