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    Wyświetlanie 1-8 z 8
    Tytuł:
    Semiconductor Ferromagnetic Structures
    Autorzy:
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2014124.pdf
    Data publikacji:
    2000-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.70.Cn
    Opis:
    Ferromagnetic semiconductor structures such as superlattices or trilayers form a new class of magnetic systems composed entirely of semiconductor materials. The examples are Ga$\text{}_{1-x}$Mn$\text{}_{x}$As-AlGaAs with the ferromagnetic layer of GaMnAs semimagnetic (diluted magnetic) semiconductor or EuS-PbS with the ferromagnetic member (EuS) of the family of europium chalcogenides. We discuss the spectrum of perspective ferromagnetic semiconductor materials, the effect of size and stress on magnetic properties of ultrathin semiconductor ferromagnetic layers, and the effect of interlayer exchange in all-semiconductor systems.
    Źródło:
    Acta Physica Polonica A; 2000, 98, 3; 171-181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic and Magnetoelectric Effects within a Sandwich Structure with the Parabolic Quantum Well
    Autorzy:
    Gruhn, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813600.pdf
    Data publikacji:
    2008-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.Cn
    75.50.Pp
    Opis:
    We study magnetic effects in a trilayer formed of magnetic layers separated by a spacer with a parabolic potential profile. The focus is on mechanisms of indirect magnetic interactions within the spacer. We show existence of magnetic oscillations and novel type of magnetoelectric effect.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 1; 175-178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors
    Autorzy:
    Dugaev, V. K.
    Litvinov, V. I.
    Dobrowolski, W.
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013062.pdf
    Data publikacji:
    2000-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.Cn
    75.50.Pp
    75.70.Ak
    Opis:
    The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 3; 455-458
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetotransport and Magnetic Properties of (Ga,Mn)As and its Heterostructures
    Autorzy:
    Ohno, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968989.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    75.50.Pp
    75.70.Cn
    Opis:
    Introduction of high density of Mn in GaAs by low temperature molecular beam epitaxy results in a homogeneous diluted magnetic semiconductor (Ga,Mn)As, which exhibits ferromagnetism at low temperatures. Temperature and magnetic field dependence of magnetotransport and magnetization of (Ga,Mn)As films revealed the Curie temperature T$\text{}_{C}$ which can be as high as 110 K and the p-d exchange, which explains T$\text{}_{C}$ in the framework of the RKKY interaction. Multilayer heterostructures such as all-semiconductor ferromagnet/nonmagnet/ferromagnet trilayer structures and resonant tunneling diodes have been fabricated and studied. These heterostructure results show the potential of the present material system for exploring new physics and for developing new functionality toward future electronic and optical devices.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 155-164
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices
    Autorzy:
    Furdyna, J.
    Leiner, J.
    Liu, X.
    Dobrowolska, M.
    Lee, S.
    Chung, J.
    Kirby, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1426668.pdf
    Data publikacji:
    2012-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    61.05.fj
    75.47.De
    75.70.Cn
    Opis:
    The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system $Ga_{1-x}Mn_xAs$ - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron reflectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 5-6; 973-980
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Asymmetric Magnetization Reversal in the Exchange-Biased MnO/(Ga,Mn)As Heterostructure Studied by Ferromagnetic Resonance
    Autorzy:
    Dziatkowski, K.
    Ge, Z.
    Liu, X.
    Furdyna, J. K.
    Twardowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046987.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    76.50.+g
    75.30.Gw
    75.70.Cn
    Opis:
    We report ferromagnetic resonance study of the magnetization reversal in the exchange-coupled MnO/(Ga,Mn)As system. The low-field parts of ferromagnetic resonance spectra measured along [1/10] and [100] directions of (Ga,Mn)As were combined into hysteresis loops, which under field-cooling conditions similarly to SQUID loops are shifted toward negative magnetic fields. The magnetization reversal process revealed by the loops occurred remarkably asymmetric for both sample configurations.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 319-324
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ferromagnetic Resonance Study of Exchange Coupled (Ga,Mn)As/GaAs/(Ga,Mn)As Heterostructures
    Autorzy:
    Dziatkowski, K.
    Ge, Z.
    Liu, X.
    Furdyna, J. K.
    Clerjaud, B.
    Twardowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047381.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    76.50.+g
    75.70.Cn
    75.30.Et
    85.75.-d
    Opis:
    Ferromagnetic resonance study of the exchange coupled (Ga,Mn)As/ GaAs/(Ga,Mn)As heterostructures is reported. The measurements were performed on the series of samples with varying thicknesses d$\text{}_{GaAs}$ of nonmagnetic GaAs spacer, established d$\text{}_{GaAs}$-dependent extent of weak and strong interlayer exchange coupling, judging on the observation of one or two ferromagnetic resonance modes.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 227-232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
    Autorzy:
    Gutowski, M.
    Stefanowicz, W.
    Proselkov, O.
    Sawicki, M.
    Żuberek, R.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1428597.pdf
    Data publikacji:
    2012-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.05.Kf
    68.47.Fg
    75.30.Gw
    75.50.Pp
    75.70.-i
    75.70.Ak
    75.70.Cn
    75.70.Rf
    76.50.+g
    Opis:
    In this work we report results of ferromagnetic resonance studies of a 6% 15nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from $[\overline{1}10]$ to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, $H_{eff}$ (=4π $M-H_{2⊥}$), $H_{2∥},$ and $H_{4∥}$. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 5-6; 1228-1230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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