Autor: Wosinski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers
Autorzy:: Levchenko, K.
Andrearczyk, T.
Domagala, J.
Wosinski, T.
Figielski, T.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1195381.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
75.30.Gw
73.50.Jt
85.75.-d
Opis:: High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1121-1124
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
Autorzy:: Andrearczyk, T.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Wróbel, J.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1791342.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
85.75.-d
Opis:: We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 901-903
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
Autorzy:: Wesela, W.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
Powiązania:: https://bibliotekanauki.pl/articles/2047701.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Jt
75.50.Pp
75.30.Gw
85.75.-d
Opis:: The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 369-373
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
Autorzy:: Andrearczyk, T.
Wosiński, T.
Figielski, T.
Mąkosa, A.
Tkaczyk, Z.
Łusakowska, E.
Wróbel, J.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1811912.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
Opis:: We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic $Ga_{0.92}Mn_{0.08}As$ layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1049-1054
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
Autorzy:: Levchenko, K.
Andrearczyk, T.
Domagała, J.
Sadowski, J.
Kowalczyk, L.
Szot, M.
Figielski, T.
Wosiński, T.
Powiązania:: https://bibliotekanauki.pl/articles/1160667.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
61.05.cp
78.20.Ls
73.50.Jt
75.30.Gw
Opis:: Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-90-A-93
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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