Autor: Łusakowski, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Free Carrier Concentration Dependence of Gd-Gd Exchange Constant in SnTe:Gd
Autorzy:: Łusakowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1934066.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.30.Hx
75.30.Et
71.70.Gm
Opis:: In some samples of SnTe:Gd the measured paramagnetic Curie temperature strongly depends on the Fermi level position. The semi-quantitative theory which explains this effect is presented. The theory is based on Kasuya's model of exchange interaction between two 4f spins of rare earth ions. In this model the interaction between 4f electrons and the valence band goes via Gd atomic 5d orbitals which, contrary to the 4f orbitals are much more extended in space. The exchange integral and the paramagnetic Curie temperature dependence on the Fermi level position are calculated.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 1018-1022
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Correlation between Magnetic and Electronic Properties of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te
Autorzy:: Łusakowski, A.
Górska, M.
Arciszewska, A.
Grodzicka, E.
Gołacki, Z.
Story, T.
Powiązania:: https://bibliotekanauki.pl/articles/1931955.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Magnetic susceptibility, electron paramagnetic resonance and transport properties of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with 0.04 < x < 0.07 and hole concentrations in the range from 0.7 × 10$\text{}^{20}$ to 16 × 10$\text{}^{20}$ cm$\text{}^{-3}$ were investigated. After annealing of the Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te samples with x < 0.05 in Sn vapor their hole concentration decreased from 5 × 10$\text{}^{20}$ cm$\text{}^{-3}$ to about 3 × 10$\text{}^{20}$ cm$\text{}^{-3}$ and their paramagnetic Curie temperature increased a few times. In samples with x > 0.05 no significant change in the magnetic properties was observed after annealing, even at lower hole concentrations. The results can be explained by assuming that an indirect exchange interaction, 4f-5d-band electrons, is responsible for the coupling among Gd ions.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 197-200
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: High Field Magnetization of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te
Autorzy:: Górska, M.
Anderson, J. R.
Wolters, C.
Łusakowski, A.
Story, T.
Gołacki, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1969093.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: The magnetization of p-type Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with x up to 0.045 and the hole concentration, p, varying from 2.7 to 8.3×10$\text{}^{20}$ cm$\text{}^{-3}$ has been measured in magnetic fields up to 27 T, at the temperatures 4.2 and 1.3 K. The data were fitted to a magnetization equation with single-ion and pair terms. From comparison of the exchange parameters determined from the high-field magnetization with those previously obtained from the high-temperature magnetic susceptibility it was found that in samples with p>5×10$\text{}^{20}$ cm$\text{}^{-3}$ the exchange was of a short-range type, while in samples with a lower carrier concentration the long-range exchange mechanism was observed.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 347-350
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Magnetic Properties of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te (0.002 ≤ x ≤ 0.09)
Autorzy:: Story, T.
Arciszewska, M.
Dobrowolski, W.
Gołacki, Z.
Górska, M.
Grodzicka, E.
Łusakowski, A.
Dynowska, E.
Witkowska, B.
Powiązania:: https://bibliotekanauki.pl/articles/1952098.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Magnetic, transport and structural properties of bulk crystals of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with Gd content 0.002 < x < 0.09 and varying carrier concentrations obtained by an isothermal annealing were studied in the temperature range T = 1.5 - 80 K. We found the effect of resonant increase in antiferromagnetic spin-spin exchange interactions in the crystals with 0.025 ≤ x ≤ 0.05. No effect was found in crystals either with higher (x > 0.05) or with lower (x < 0.025) Gd concentration. The observed Gd composition dependence of the magnetic and transport properties of SnGdTe can be explained in a proposed model relating these experimental properties to the Gd composition induced shift of the position of Gd$\text{}^{3+}\text{}^{/}\text{}^{2+}$ level with respect to the top of the valence band of SnGdTe.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 935-938
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Transport and Magnetic Study of Gd Ions in Pb$\text{}_{1-y}$Sn$\text{}_{y}$Te
Autorzy:: Story, T.
Arciszewska, M.
Łazarczyk, P.
Łusakowski, A.
Górska, M.
Dobrowolski, W.
Witkowska, B.
Grodzicka, E.
Gałązka, R. R.
Powiązania:: https://bibliotekanauki.pl/articles/1968424.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Electric conductivity, Hall effect and magnetic susceptibility of Pb$\text{}_{1-x-y}$ Sn$\text{}_{y}$Gd$\text{}_{x}$Te mixed crystals with 0.13 ≤ y ≤ 0.93 and 0.001 ≤ x ≤ 0.04 were experimentally studied over the temperature range 4K ≤ T ≤ 300 K. The incorporation of Gd ions into the Pb$\text{}_{1-y}$Sn$\text{}_{y}$Te matrix results in semi-metallic n-type conductivity of the crystals with y < 0.6. For crystals with y > 0.6 one observes only semi-metallic p-type conductivity. We present a model explaining these results in terms of the Sn composition dependence of the location of Gd$\text{}^{2+}\text{}^{/}\text{}^{3+}$ level with respect to the band edges of PbSnGdTe.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 997-1000
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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