Autor: Yu, W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Resonant State of 4f$\text{}^{14}\text{}^{/}\text{}^{13}$ Yb Ion in Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te
Autorzy:: Grodzicka, E.
Dobrowolski, W.
Story, T.
Slynko, E. T.
Vygranenko, Yu.K.
Willekens, M. M. H.
Swagten, H. J. M.
de Jonge, W. J. M.
Powiązania:: https://bibliotekanauki.pl/articles/1950801.pdf
Data publikacji:: 1996-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
75.20.Ck
Opis:: The study of transport and of magnetic properties of Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te:Yb mixed crystals (0 ≤ x ≤ 0.04) is reported. It is shown that Yb forms a donor state resonant with the PbTe valence band. The donor state position may be tuned (shifted relative to the energy gap) by admixture of Ge. The properties of the Yb ion in the Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te matrix makes the system unique from the point of view of magnetic properties. It is demonstrated that the change of the conductivity type from p to n induces transitions from the paramagnetic state to the diamagnetic one.
Źródło:: Acta Physica Polonica A; 1996, 90, 4; 801-804
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Magnetic and Structural Properties of EuS-PbS Multilayers Grown on n-PbS (100) Substrates
Autorzy:: Chernyshova, M.
Łusakowska, E.
Domukhovski, V.
Grasza, K.
Szczerbakow, A.
Wrotek, S.
Kowalczyk, L.
Story, T.
Smits, C. J. P.
Swagten, H. J. M.
De Jonge, W. J. M.
Palosz, W.
Sipatov, A. Yu.
Volobuev, V. V.
Powiązania:: https://bibliotekanauki.pl/articles/2035589.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Magnetic properties of semiconductor EuS(t)-PbS(d)-EuS(t) ferromagnetic trilayers (t=30÷300Å and d=7.5÷70Å) grown on n-type monocrystalline PbS (100) substrate were studied by SQUID magnetometry and ferromagnetic resonance technique yielding, in particular, the dependence of the ferromagnetic Curie temperature on the thickness of the EuS layer. Structural parameters of layers were examined by X-ray powder diffraction analysis. A high structural quality of the substrate and the multilayer was verified by the measurements of the X-ray rocking curve width indicating the values of the order of 100 arcsec and by atomic force microscopy revealing the presence on the cleft PbS surface regions practically flat in the atomic scale over the area of 1×0.1μm$\text{}^{2}$.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 609-615
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Vertical Electron Transport through PbS-EuS Structures
Autorzy:: Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Temperature Dependence of Antiferromagnetic Interlayer Exchange Coupling in EuS-PbS Multilayers
Autorzy:: Chernyshova, M.
Kowalczyk, L.
Baran, M.
Szczerbakow, A.
Story, T.
Smits, C. J. P.
Filip, A. T.
Swagten, H. J. M.
de Jonge, W. J. M.
Sipatov, A. Yu.
Powiązania:: https://bibliotekanauki.pl/articles/2038129.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Antiferromagnetic interlayer exchange coupling in semiconductor EuS-PbS-EuS ferromagnetic trilayers grown on PbS (001) substrates with ultrathin (0.6-1.2 nm) nonmagnetic PbS spacers is studied by SQUID magnetometry and model calculations. Analysis of the experimentally observed magnetic field and temperature dependence of the magnetization of EuS-PbS structures reveals a rapid decrease in the interlayer coupling energy with increasing temperature indicating a temperature dependence of the microscopic coupling mechanism acting in these all-semiconductor ferromagnetic/nonmagnetic multilayers.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 599-605
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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