Autor: Zhu, L. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Inhomogeneous Magnetic Field Penetration in Superconducting Niobium Films
Autorzy:: Abal'osheva, I.
Abal'oshev, A.
Cieplak, M.
Zhu, L.
Chien, C.
Powiązania:: https://bibliotekanauki.pl/articles/1537190.pdf
Data publikacji:: 2010-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.25.Ha
74.25.Uv
74.70.Ad
Opis:: The peculiarities of magnetic field penetration in the form of fingering or dendritic instabilities are studied by magneto-optical technique in the niobium films of different thickness. It is observed that the reduction of Nb film thickness reduces the threshold field for instabilities, in agreement with the theoretical predictions. In addition, it is shown that the silver overlayer deposited on the top of Nb film leads also to the enhancement of instabilities, in marked contrast to the effect of gold or aluminum overlayers, which are known to suppress instabilities.
Źródło:: Acta Physica Polonica A; 2010, 118, 2; 396-398
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Ultrathin Niobium in the Si/Nb/Si Trilayers
Autorzy:: Zaytseva, I.
Abal'oshev, O.
Dłużewski, P.
Minikayev, R.
Cieplak, Marta
Zhu, L.
Chien, C.
Powiązania:: https://bibliotekanauki.pl/articles/1374193.pdf
Data publikacji:: 2014-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.78.-w
74.70.Ad
74.25.-q
Opis:: We study magnetotransport properties of the Si/Nb/Si trilayers, in which the thickness of niobium, d, changes from 1.1 nm to 50 nm, while the thickness of Si is fixed at 10 nm. The niobium films are amorphous for d < 4 nm, while in thicker films the alligned polycrystalline grains are formed. We observe that the Hall coefficient changes sign into negative in the films with d < 1.6 nm. We also find that in the ultrathin films the magnetic field induces a transition from the superconducting into a metallic phase with the resistance smaller than the normal-state resistance.
Źródło:: Acta Physica Polonica A; 2014, 126, 4a; A-140-A-144
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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