- Tytuł:
- Magnetoresistance of Si/Nb/Si Trilayers
- Autorzy:
-
Zaytseva, I.
Cieplak, M.
Abal'oshev, A.
Dluzewski, P.
Grabecki, G.
Plesiewicz, W.
Zhu, L.
Chien, C. - Powiązania:
- https://bibliotekanauki.pl/articles/1537220.pdf
- Data publikacji:
- 2010-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
74.62.-c
74.25.F-
74.25.Ha
74.62.En - Opis:
- We study the superconductor-insulator transition in Si/Nb/Si trilayers, in which the thickness of Si is fixed at 10 nm, and the nominal thickness of Nb changes in the range between d = 20 nm down to d = 0.3 nm. The transmission electron microscopy indicates the formation of the mixed Nb-Si layer for small d. Both the thickness-induced, and the magnetic-field induced superconductor-insulator transition is observed. The crossing point of the isotherms at the critical field $B_{c}$ decreases with decreasing d, and it is T-independent at temperatures below 300 mK. At larger fields the weak peak in magnetoresistance appears in some of the films.
- Źródło:
-
Acta Physica Polonica A; 2010, 118, 2; 406-408
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł