Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Cieplak, M" wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Doping Effects of Co, Ni, and Cu in $FeTe_{0.65}Se_{0.35}$ Single Crystals
Autorzy:
Bezusyy, V.
Gawryluk, D.
Berkowski, M.
Cieplak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431291.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.F-
74.25.Op
74.62.Dh
74.70.Xa
Opis:
The resistivity, magnetoresistance, and magnetic susceptibility are measured in single crystals of $FeTe_{0.65}Se_{0.35}$ with Cu, Ni, and Co substitutions for Fe. The crystals are grown by Bridgman's method. The resistivity measurements show that superconductivity disappears with the rate which correlates with the nominal valence of the impurity. From magnetoresistance we evaluate doping effect on the basic superconducting parameters, such as upper critical field and coherence length. We find indications that doping leads to two component superconducting behavior, possibly because of local charge depression around impurities.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 816-819
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Iron Substitutions on the Transport Properties of $FeTe_{0.65}Se_{0.35}$ Single Crystals
Autorzy:
Bezusyy, V.
Gawryluk, D.
Malinowski, A.
Berkowski, M.
Cieplak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1374765.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.F-
74.62.Dh
74.70.Xa
Opis:
We study the ab-plane resistivity and Hall effect in the single crystals of $Fe_{1-y}M_yTe_{0.65}Se_{0.35}$, where M = Co or Ni (0 ≤ y ≤ 0.21). In case of each dopant two types of crystals, with different crystalline quality, are prepared by Bridgman's method using different cooling rates, fast or slow. The impurities suppress the superconducting transition temperature, $T_c$, with different rates. $T_c$ reaches zero at markedly different impurity content: only 3 at.% of Ni, and about 14 at.% of Co. In addition, the suppression is somewhat dependent on the crystal cooling rate. The resistivity at the onset of superconductivity rises only weakly with the Co doping, while it increases 10 times faster for Ni. The Hall coefficient $R_{H}$ is positive for Co doping indicating that hole carriers dominate the transport. For Ni $R_{H}$ changes sign into negative at low temperatures for crystals with the Ni content exceeding 6 at.%. The implications of these results are discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-76-A-79
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of Strain on the Superconducting Properties of Strongly Underdoped $La_{2-x}Sr_xCuO_4$ Thin Films
Autorzy:
Zaytseva, I.
Cieplak, M.
Paszkowicz, W.
Abal'oshev, A.
Berkowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431516.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.F-
74.62.En
74.78.-w
Opis:
Using pulsed laser deposition we have grown films of $La_{2-x}Sr_xCuO_4$ with x in close vicinity of the superconductor-insulator transition, x=0.051 and x=0.048, on $SrLaAlO_4$ substrates, and of different thickness d (from 25 nm to 250 nm). The X-ray diffraction shows that for each d the films grow with variable degree of compressive in-plane strain, with the largest strain achieved in thinnest films. The resistivity measurements show strong enhancement of superconductivity with increasing strain, so that the onset of superconductivity at temperature as high as 27 K is observed. With increasing strain the character of resistivity changes from the insulating to metallic.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 858-865
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoresistance of Si/Nb/Si Trilayers
Autorzy:
Zaytseva, I.
Cieplak, M.
Abal'oshev, A.
Dluzewski, P.
Grabecki, G.
Plesiewicz, W.
Zhu, L.
Chien, C.
Powiązania:
https://bibliotekanauki.pl/articles/1537220.pdf
Data publikacji:
2010-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.62.-c
74.25.F-
74.25.Ha
74.62.En
Opis:
We study the superconductor-insulator transition in Si/Nb/Si trilayers, in which the thickness of Si is fixed at 10 nm, and the nominal thickness of Nb changes in the range between d = 20 nm down to d = 0.3 nm. The transmission electron microscopy indicates the formation of the mixed Nb-Si layer for small d. Both the thickness-induced, and the magnetic-field induced superconductor-insulator transition is observed. The crossing point of the isotherms at the critical field $B_{c}$ decreases with decreasing d, and it is T-independent at temperatures below 300 mK. At larger fields the weak peak in magnetoresistance appears in some of the films.
Źródło:
Acta Physica Polonica A; 2010, 118, 2; 406-408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phase Diagram and Activation Energy for Vortex Pinning in Nb/(Co,Pd) Superconductor-Ferromagnet Bilayer
Autorzy:
Syryanyy, Y.
Aleszkiewicz, M.
Cieplak, Marta
Zhu, L.
Chien, C.
Powiązania:
https://bibliotekanauki.pl/articles/1374109.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.F-
74.25.N-
74.25.Wx
74.62.-c
74.70.-b
74.78.-w
74.78.Fk
75.70.Kw
75.70.-i
Opis:
Using the magnetoresistance measurements we study the phase transition line and the activation energy for vortex pinning in superconductor/ferromagnet bilayer, built of a ferromagnetic Co/Pd multilayer with perpendicular magnetic anisotropy, and a niobium film, with insulating layer in-between to eliminate proximity effect. The domain width is reversibly pre-defined using the angle-dependent demagnetization. We find that the enhancement of the activation energy for vortex pinning by magnetic domains is rather modest, by a factor of about 2.1. We attribute this to large domain width, and large dispersion of the domain width in this bilayer.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-123-A-126
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies