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Wyszukujesz frazę "73.23.-b" wg kryterium: Temat


Wyświetlanie 1-5 z 5
Tytuł:
Electron Transport in Magnetic Quantum Point Contacts
Autorzy:
Pietsch, T.
Egle, S.
Espy, C.
Strigl, F.
Scheer, E.
Powiązania:
https://bibliotekanauki.pl/articles/1490057.pdf
Data publikacji:
2012-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
72.25.-b
73.63.-b
Opis:
In recent years, the fabrication of novel building blocks for quantum computation- and spintronics devices gained significant attention. The ultimate goal in terms of miniaturization is the creation of single-atom functional elements. Practically, quantum point contacts are frequently used as model systems to study the fundamental electronic transport properties of such mesoscopic systems. A quantum point contact is characterised by a narrow constriction coupling two larger electron reservoirs. In the absence of a magnetic field, the conductance of these quantum point contacts is quantised in multiples of $2 e^2//h$, the so-called conductance quantum $(G_0)$. However, in the presence of magnetic fields the increased spin-degeneracy often gives rise to a deviation from the idealized behaviour and therefore leads to a change in the characteristic conductance of the quantum point contact. Herein, we illustrate the complex magnetotransport characteristics in quantum point contacts and magnetic heterojunctions. The theoretical framework and experimental concepts are discussed briefly together with the experimental results as well as potential applications.
Źródło:
Acta Physica Polonica A; 2012, 121, 2; 401-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Conductivity of Carbon Nanoparticles Stimulated by Electric Field
Autorzy:
Markowski, D.
Kempiński, W.
Kempiński, M.
Trybuła, Z.
Kaszyńska, K.
Śliwińska-Bartkowiak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1535906.pdf
Data publikacji:
2010-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.Pr
73.21.La
73.23.Hk
73.25.+i
73.63.-b
73.23.-b
Opis:
Host-guest interactions can be the unique method of spin manipulation in nanoscale. Strong changes in spin localization are generated when potential barriers between nanographitic units of activated carbon fibers are modified by interaction with adsorbed molecules. Stronger modifications occur when dipolar guest molecules are stimulated with external electric field. We report experimental results which show the influence of electric field on the spin localization in activated carbon fibers.
Źródło:
Acta Physica Polonica A; 2010, 118, 3; 457-458
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Semiconductor Devices
Autorzy:
Balestra, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811906.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.20.-r
73.21.-b
73.23.-b
73.30.+y
73.40.-c
73.50.-h
73.63.-b
Opis:
A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 945-974
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Through a Single-Molecule Transistor: Master-Equation Approach
Autorzy:
Donabidowicz-Kolkowska, A.
Timm, C.
Powiązania:
https://bibliotekanauki.pl/articles/1431179.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.Hk
73.63.-b
81.65.+h
Opis:
In the present work we employ the master-equation approach to describe the transport through a molecule located in the central region between two external electrodes. In contrast to the transport through a quantum dot, electron-phonon coupling should be taken into account for tunnelling through a molecule. The coupling results in the appearance of additional effects such as vibrational sidebands or, for the case of strong coupling, a suppression of the current at low bias voltage (Franck-Condon blockade). In contrast to previous studies, the transport properties are described by the density matrix calculated explicitly with diagonal and off-diagonal elements. The observed phenomena are discussed and compared to previous studies.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 730-732
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signatures of Majorana States in Electron Transport through a Quantum Dot Coupled to a Topological Wire
Autorzy:
Stefański, P.
Powiązania:
https://bibliotekanauki.pl/articles/1384812.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
73.23.Hk
73.21.La
74.78.Na
Opis:
We consider theoretically a system composed of a quantum dot coupled to a topological superconducting wire. The dot, being in Coulomb blockade (CB) regime is additionally coupled to the normal leads. The topological wire hosts Majorana states, which, as we show, characteristically modifies conductance through the dot. An unpaired Majorana state in the wire causes a unique temperature dependence of zero bias conductance vs. gate voltage. It decreases in-between CB peaks and on the sides of the peaks from the plateau at ~ e²/2h when temperature increases. At the same time conductance increases at the CB peak positions. It is accompanied by zero bias anomaly in differential conductance. For finite overlap of Majorana states in the wire the zero bias anomaly disappears. Instead, two characteristic Fano resonances of opposite symmetry appear, positioned mirror-symmetrically with respect to zero bias.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 198-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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