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    Wyświetlanie 1-6 z 6
    Tytuł:
    Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
    Autorzy:
    Romanyuk, V.
    Dmitruk, N.
    Karpyna, V.
    Lashkarev, G.
    Popovych, V.
    Dranchuk, M.
    Pietruszka, R.
    Godlewski, M.
    Dovbeshko, G.
    Timofeeva, I.
    Kondratenko, O.
    Taborska,, M.
    Ievtushenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1156366.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Hf
    73.61.Ga
    Opis:
    Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Studies of CdTe/ZnTe Superlattices with Ultrathin ZnTe Layers
    Autorzy:
    Mariette, H.
    Jouneau, P. H
    Pelekanos, N. T.
    Tardot, A.
    Feuilet, G.
    Magnea, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929608.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Hf
    73.61.Ga
    Opis:
    Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the study of special superlattice structure, corresponding to a monomolecular plane-host crystal system. Particular attention is given to the strain state control of the inserted ZnTe monolayer. High resolution electron microscopy is used to measure the local lattice distortion: the method yields the location and the total amount of Zn per period, and the results are compared with X-ray diffraction data. Optical properties of these superlattices are also presented. All results show the ability to control ultrathin pseudomorphic layers of ZnTc within CdTe, with limited Zn segregation, and of high crystalline and optical quality. In addition, they can be fitted within the framework of elasticity theory for the structural data, and of a finite quantum well model for the optical ones, even in the ultimate limit of only one nominal ZnTe monolayer.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 423-433
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure Dependent Conductivity of Ultrathin ZnO Films
    Autorzy:
    Snigurenko, D.
    Kopalko, K.
    Krajewski, T.
    Łuka, G.
    Gierałtowska, S.
    Witkowski, B.
    Godlewski, M.
    Dybko, K.
    Paszkowicz, W.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403646.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    81.15.Gh
    Opis:
    Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1042-1044
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Thermal Process on Physical Properties of ZnO Films Prepared by Spray Pyrolysis
    Autorzy:
    Gencyilmaz, O.
    Atay, F.
    Akyuz, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377852.pdf
    Data publikacji:
    2014-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    78.66.Hf
    73.61.Ga
    68.37.Ps
    Opis:
    ZnO films were deposited on glass substrates by ultrasonic spray pyrolysis technique at a substrate temperature of 300 ± 5°C. All of the films have been annealed at 500°C temperature for different time (1, 2, and 3 h) to improve the optical, electrical and surface properties. The effect of annealing time on the films of physical properties has been investigated. UV-Vis spectrophotometer has been used for transmittance measurements. Also, band gap values of the films have been determined by optical method. Atomic force microscopy has been used to have information the surface morphology and roughness values of the films. Thicknesses, refractive index and extinction coefficient values of the films have been determined by spectroscopic ellipsometry technique. The electrical conduction mechanisms and resistivity of the films were investigated using two probe technique. After all the investigations it was concluded that annealing time has a dramatic effect especially on the surface, optical properties and electrical resistivity values of ZnO films. From the results of these investigations, the application potential of the films for solar cell devices as transparent electrode was searched.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 6; 1331-1337
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Extension of Usable Spectral Range of Peltier Cooled Photodetectors
    Autorzy:
    Piotrowski, A.
    Piotrowski, J.
    Gawron, W.
    Pawluczyk, J.
    Pedzinska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807657.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.60.Gz
    82.80.Gk
    73.61.Ga
    78.66.Hf
    81.05.Dz
    Opis:
    This paper provides update on development of the Peltier cooled detectors optimized for wavelengths above 13 μm. Initially, the devices made by Vigo were mostly used for uncooled detection of $CO_{2}$ laser radiation. Over the years the performance and speed of response has been steadily improved. At present the uncooled or Peltier cooled photodetectors can be used for sensitive and fast response detection in the mid-wavelength and long-wavelength infrared spectral range. The devices have found important applications in IR spectrometry, quantum cascade laser based gas analyzers, laser radiation alerters and many other IR systems. Recent efforts were concentrated on the extension of useful spectral range to > 13 μm, as required for its application in Fourier transform IR spectrometers. This was achieved with improved design of the active elements, use of monolithic optical immersion technology, enhanced absorption of radiation, dedicated electronics, series connection of small cells in series, and last but not least, applying more efficient Peltier coolers. Practical devices are based on the complex HgCdTe heterostructures grown on GaAs substrates with metal-organic chemical vapor deposition technique with immersion lens formed by micromachining in the GaAs substrates. The results are very encouraging. The devices cooled with miniature 4 stage Peltier coolers mounted in TO-8 style housings show significant response at wavelength exceeding 16 μm.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-52-S-55
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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