- Tytuł:
- Annealing Effect on Dark Electrical Conductivity and Photoconductivity of Ga-In-Se Thin Films
- Autorzy:
-
Isik, M.
Gullu, H. - Powiązania:
- https://bibliotekanauki.pl/articles/1029832.pdf
- Data publikacji:
- 2018-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.50.-h
73.61.-r
73.61.Jc - Opis:
- Dark-conductivity and photoconductivity properties of thermally evaporated Ga-In-Se (GIS) thin films were investigated in the temperature range of 80-430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400° to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 × 10^{-8} Ω^{-1} cm^{-1} for as-grown films and increased to 3.6 × 10^{-4} Ω^{-1} cm^{-1} for annealed films at 400°. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260-360 and 370-430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400°, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm^{2}.
- Źródło:
-
Acta Physica Polonica A; 2018, 133, 5; 1119-1124
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł