- Tytuł:
- Defect Analysis of Pentacene Diode
- Autorzy:
-
Stuchlíková, L.
Weis, M.
Juhász, P.
Kósa, A.
Harmatha, L.
Jakabovic, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1364022.pdf
- Data publikacji:
- 2014-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.80.Le
73.50.Gr
71.55.-i - Opis:
- This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × $10^{-18} cm^2$ at 0.34 eV, 3.1 × $10^{-17} cm^2$ at 0.41 eV, and 2.9 × $10^{-15} cm^2$ at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 4; 1038-1041
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł