Autor: Kiprijanovič, O. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN
Autorzy:: Ardaravičius, L.
Kiprijanovič, O.
Liberis, J.
Powiązania:: https://bibliotekanauki.pl/articles/1813392.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
73.40.Kp
73.50.Fq
Opis:: The two-dimensional gas in AlGaN/AlN/GaN heterostucture with a very thin (0.6 nm) AlN spacer was investigated by conductivity relaxation measurements in 86-300 K temperature range. The results show the presence of two exponential relaxation processes characterized by different characteristic time constants. Parameters of the fast and slow components of the processes differently depend on the electric field and temperature. The fast process is attributed to influence of the electric field on the barrier formed by the spacer, while the slow process is attributed to the hot-electron capture out of the channel followed by electron thermal release.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1001-1004
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels
Autorzy:: Ardaravičius, L.
Kiprijanovič, O.
Liberis, J.
Powiązania:: https://bibliotekanauki.pl/articles/1506207.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Fq
73.40.Kp
Opis:: Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained $Al_{0.8}In_{0.2}N$/AlN/GaN and nearly lattice matched $Al_{0.84}In_{0.16}N$/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × $10^7$ cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 231-233
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Fast Electrical Switching of Thin Manganite Films
Autorzy:: Balevičius, S.
Kiprijanovič, O.
Stankevič, V.
Žurauskienė, N.
Česnys, A.
Tolvaišienė, S.
Abrutis, A.
Plaušinaitienė, V.
Powiązania:: https://bibliotekanauki.pl/articles/1813192.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.47.Lx
75.47.Gk
73.50.Fq
Opis:: The effects of strong pulsed electric field on the electrical properties of thin epitaxial $La_{0.7}Sr_{0.3}MnO_3$ films were investigated. The fast electrical switching from high resistance off-state to low resistance on-state was obtained at current densities higher than $10^6 A//cm^2$. This current was able to induce an irreversible damage of the sample in the regions at the edges of the electrodes of the film. It was demonstrated that thermal effects are responsible for appearance of delay time and asymmetrical shape of current channel in on-state, however, the fast switching from off- to on-state is a result of electronic effects appearing when critical power is reached in the film.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 821-824
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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