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Wyświetlanie 1-15 z 34
Tytuł:
Magnetoresistive Properties of Manganite-Based Heterojunctions
Autorzy:
Devenson, J.
Vengalis, B.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Ašmontas, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807945.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
71.30.+h
73.50.-h
Opis:
Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1130-1132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Gas Permeation Through Thin ta-C:H Films
Autorzy:
Lackner, J.
Waldhauser, W.
Kahn, M.
Powiązania:
https://bibliotekanauki.pl/articles/1401332.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
Opis:
Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was the investigation of the film thickness influence on the gas permeation barrier of ultra-thin, cytocompatible tetrahedral amorphous carbon (ta-C:H) films on polyimide (PI) foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source) was applied to deposit these diamond-like carbon films. The results indicate high barrier to hydrogen gas permeation by all film thicknesses (<0.2% H₂ permeation compared to uncoated PI). While the thickness of the ta-C:H layers has minor influence, the number of layers, realized by one- or double-side deposition strongly impacts the barrier effect. Finally, tests under tensile stresses showed minor impact in the elasto-plastic deformation regime, but the expected strong increase of gas permeation after exceeding the tensile strength and film fracture.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1236-1239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures
Autorzy:
Butkutė, R.
Anisimovas, F.
Oginskis, A. K.
Steikūnienė, A.
Devenson, J.
Vengalis, B.
Powiązania:
https://bibliotekanauki.pl/articles/2047223.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
71.30.+h
73.50.-h
75.70.Pa
Opis:
In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and related heterostructures composed of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and p-type La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$. The ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples were prepared by a conventional solid state reaction technique. Single phase La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films and La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$ Ca$\text{}_{0.33}$MnO$\text{}_{3}$ heterostructures were grown on lattice-matched perovskite NdGaO$\text{}_{3}$ substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples and thin films from thermopower data. Both ceramic samples and thin films of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ material and the heterostructures.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 111-115
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Transport in Thin-Film Structures
Autorzy:
Bułka, B.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1930612.pdf
Data publikacji:
1994-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.At
Opis:
General quantum-mechanical description of electronic transport in thin-film structures, which is based on the Kubo approach, is presented and applied to a single film with ideal surfaces. The cases of a constant chemical potential and a constant particle number are considered and analysed numerically.
Źródło:
Acta Physica Polonica A; 1994, 85, 2; 465-468
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties
Autorzy:
Luhin, V.
Zharsky, I.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400440.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
73.50.-h
Opis:
In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of $In_2O_3$ films formation with high selectivity and sensitivity to $NO_2$, and $NH_3$ are established.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 837-839
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Post Annealing on La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ Thin Films
Autorzy:
Cheng, W. F.
Leung, C. W.
Powiązania:
https://bibliotekanauki.pl/articles/2047232.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.-m
73.50.-h
Opis:
The stability of La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ films were deposited on (100) LaAlO$\text{}_{3}$ substrates at 650ºC with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (T$\text{}_{c}$) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, T$\text{}_{c}$ slightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the T$\text{}_{c}$ of the films strongly depended on the annealing procedures.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 117-122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interface Mixing in Fe/Si Multilayers Observed by the In Situ Conductance Measurements
Autorzy:
Chomiuk, P.
Błaszyk, M.
Szymański, B.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1810582.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Sx
73.50.-h
Opis:
In this contribution the in situ conductance vs. deposition time dependences of Fe/Si multilayers are analysed. The plot of resistance multiplied by the square of the thickness as a function of iron thickness shows that during the iron deposition initially amorphous-like Fe-Si mixture is formed, next the mixture crystallises, and finally bcc-Fe phase appears. The interface mixing is also manifested by the reduction of the total multilayer thickness measured by small angle X-ray diffraction.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 355-356
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect
Autorzy:
Vagner, P.
Mos̆ko, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952718.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
Opis:
We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1103-1107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Thin Films of the Organic Superconductor α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$
Autorzy:
Moldenhauer, J.
Wachtel, H.
Schweitzer, D.
Gompf, B.
Eisenmenger, W.
Bele, P.
Brunner, H.
Keller, H. J.
Powiązania:
https://bibliotekanauki.pl/articles/1933377.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Kn
73.50.-h
81.15.Gh
Opis:
α-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$ is a quasi-two-dimensional organic metal with a metal-insulator phase transition at 135 K. Thermal treatment at about 80°C leads to the metallic system α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$, which becomes superconducting below 8 K. Thin films of the α-phase (thickness between 500 and 3000 Å) have been evaporated in high vacuum onto several substrates and characterized by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and low field microwave absorption. Depending on the temperature of the substrate and the evaporation rate, the films exhibit different degrees of microcrystallinity, which under certain conditions can be strongly reduced and a completely covering film can be obtained. X-ray diffraction spectra reveal a high orientation with the c-axis perpendicular to the substrate and as well the successful conversion into the α$\text{}_{t}$-phase by tempering. Scanning electron microscopy and atomic force microscopy investigations prove that the conversion takes place without reducing the mechanical quality of the films. Low-field microwave-absorption experiments show that the α$\text{}_{t}$-films become superconducting with an onset at 9 K.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 823-827
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing Effect on Dark Electrical Conductivity and Photoconductivity of Ga-In-Se Thin Films
Autorzy:
Isik, M.
Gullu, H.
Powiązania:
https://bibliotekanauki.pl/articles/1029832.pdf
Data publikacji:
2018-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
73.61.Jc
Opis:
Dark-conductivity and photoconductivity properties of thermally evaporated Ga-In-Se (GIS) thin films were investigated in the temperature range of 80-430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400° to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 × 10^{-8} Ω^{-1} cm^{-1} for as-grown films and increased to 3.6 × 10^{-4} Ω^{-1} cm^{-1} for annealed films at 400°. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260-360 and 370-430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400°, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm^{2}.
Źródło:
Acta Physica Polonica A; 2018, 133, 5; 1119-1124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport and Relaxation of Charge in Organic-Inorganic Nanocomposites
Autorzy:
Olenych, I.
Aksimentyeva, O.
Tsizh, B.
Horbenko, Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1030981.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.Ph
82.35.Np
Opis:
In this work the nanocomposites of poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) host matrix with porous silicon and ZnO nanoparticles were manufactured. The charge transport and relaxation processes in organic-inorganic nanocomposites were analyzed based on complex studies of electrical conductivity and depolarization current in the wide temperature range. By means of impedance spectroscopy we have established that increase of content of ZnO nanoparticles causes the rise in the internal resistance of the hybrid films. Based on the spectra of thermally stimulated depolarization current the localized electron states in the experimental samples are found. The combination of the porous silicon and zinc oxide nanoparticles provides an increase of surface area of the sensors and their high sensitivity to water molecules.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 851-855
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers
Autorzy:
Głowienka, D.
Szmytkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1033869.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
73.50.-h
73.50.Pz
Opis:
The role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a great influence on the range and the rising time of the photocurrent.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 397-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characterization of Ammonia Carbon-Based Sensors
Autorzy:
Kościński, M.
Seredych, M.
Bandosz, T.
Śliwińska-Bartkowiak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1402567.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
A sensor response parameters of the ammonia sensors which are prepared by using composite of graphene oxide and poly(4-styrenesulfonic acid-co-maleic acid) sodium salt derived carbon are presented. Using the self-designed interdigitated electrode on the experimental setup, we were able to determine the capacity for gas sensing as a sensor response for low ammonia concentrations (20, 50, and 100 ppm).
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 182-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization Reversal in Cobalt Nanocolumn Structures Obtained by Glancing Angle Deposition
Autorzy:
Buchta, K.
Schmidt, Ch.
Trykowski, G.
Biniak, S.
Kempiński, M.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1428548.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
An advanced deposition technique known as glancing angle deposition was used to fabricate randomly seeded magnetic cobalt columnar nanostructures. The existence of nanocolumns was confirmed by the cross-section scanning electron microscopy. The evolution in the magnetization reversal mechanism as a function of the film thickness was investigated. The coercivity $H_{C}$ and $M_{R}//M_{S}$ ratio (where $M_{R}$ and $M_{S}$ denote the remanent and saturation magnetization, respectively), derived from the magnetic hysteresis loops, are discussed as a function of the angle between the external magnetic field and the surface normal. The direction of the magnetization easy/hard axis and the columns inclination angle were determined on the basis of the angular dependences of the $H_{C}$ and the $M_{R}//M_{S}$. A crossover from the coherent rotation, based on the Stoner-Wohlfarth model, to the curling reversal mode was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1222-1224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoconductivity Study of Sputter-Deposited $Cu_2O$ Films
Autorzy:
Bhattacharyya, S.
Reppin, D.
Sanguino, P.
Ayouchi, R.
Polity, A.
Schwarz, R.
Hofmann, D.
Meyer, B.
Powiązania:
https://bibliotekanauki.pl/articles/1492344.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
73.50.-h
73.61.-r
Opis:
Cuprous oxide $(Cu_2O)$ thin films were deposited by radio frequency sputtering technique on fused silica substrates. The X-ray diffraction study of the $Cu_2O$ samples showed reflections from (111) and (200) planes of cubic $Cu_2O$. The samples were then annealed at 1008 K in nitrogen $(N_2)$ atmosphere. Annealed samples indicated strain relaxation. The samples were then characterized optically by measuring the transmittance using an ultraviolet-visible-near infrared photospectrometer. The band gap of the as-deposited samples were found to be ≈ 2.1 eV, whereas the annealed samples had a band gap of ≈ 2.6 eV. The transient photocurrent decay measurements of the annealed films indicated slow non-exponential power law decays in several time windows, indicating multiple trapping of the carriers in the deep defects within the band gap. The steady-state photo and dark current measurement and persistent photocurrent (PPC) was carried out on the annealed samples. In general, the photocurrent was found to be much smaller than the dark current. The steady-state and transient photocurrent measurements were utilized to determine the carrier lifetime-mobility product, 〈μτ 〉 of the samples and to determine the carrier mobility, 〈μ 〉.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-011-A-014
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 34

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