Temat: 73.50.Bk - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect
Autorzy:: Vagner, P.
Mos̆ko, M.
Powiązania:: https://bibliotekanauki.pl/articles/1952718.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
Opis:: We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1103-1107
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Thermalization of One-Dimensional Electron Gas by Many-Body Coulomb Scattering
Autorzy:: Moško, M.
Cambel, V.
Powiązania:: https://bibliotekanauki.pl/articles/1931928.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
78.47.+p
Opis:: Quantum wires are peculiar in the sense that binary electron-electron collisions cannot thermalize energy distribution of the electrons in the same subband. We show that such thermalization occurs through many-body Coulomb scattering. We consider one-dimensional electron gas described by Newton equations of motion with many-body Coulomb forces. These equations are solved by molecular dynamics technique. Thermalization of the non-equilibrium distribution towards Maxwell function is demonstrated for a single-subband GaAs wire.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 157-160
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Near-Band Edge Spectral Hole in Quantum Well: No Evidence for Subpicosecond Plasma Thermalization
Autorzy:: Mos̆ko, M.
Mos̆ková, A.
Powiązania:: https://bibliotekanauki.pl/articles/1952682.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
78.47.+p
Opis:: We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10$\text{}^{10}$ cm$\text{}^{-2}$) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1055-1059
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Size Effects on the Electrical Resistivity of the Ultra-Thin Metallic Film
Autorzy:: Paja, A.
Działo, A.
Powiązania:: https://bibliotekanauki.pl/articles/1198662.pdf
Data publikacji:: 2014-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
73.63.-b
73.63.Hs
Opis:: In this article we investigate the electron-phonon interaction in metals in the system strongly reduced in one dimension. The Fermi sphere which represents the free-electron structure of a bulk metal was replaced by a discrete set of the Fermi disks. Using the variational expression for resistivity the temperature and film thickness dependences of the resistivity were derived and compared with experimental data.
Źródło:: Acta Physica Polonica A; 2014, 125, 5; 1220-1223
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Electrical Resistivity of the Monoatomic Metallic Layer
Autorzy:: Paja, A.
Działo, A.
Powiązania:: https://bibliotekanauki.pl/articles/1400157.pdf
Data publikacji:: 2013-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
73.63.-b
73.63.Hs
Opis:: We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.
Źródło:: Acta Physica Polonica A; 2013, 123, 4; 770-772
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:: Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:: https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:: The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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