- Tytuł:
- Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
- Autorzy:
-
Lonsky, M.
Teschabai-Oglu, J.
Pierz, K.
Sievers, S.
Schumacher, H.
Yuan, Y.
Böttger, R.
Zhou, S.
Müller, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1397018.pdf
- Data publikacji:
- 2018-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
75.50.Pp
73.50.Td
73.50.-h
73.61.-r
64.60.ah
61.72.-y - Opis:
- We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
- Źródło:
-
Acta Physica Polonica A; 2018, 133, 3; 520-522
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł