Autor: Moško, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Thermalization of One-Dimensional Electron Gas by Many-Body Coulomb Scattering
Autorzy:: Moško, M.
Cambel, V.
Powiązania:: https://bibliotekanauki.pl/articles/1931928.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
78.47.+p
Opis:: Quantum wires are peculiar in the sense that binary electron-electron collisions cannot thermalize energy distribution of the electrons in the same subband. We show that such thermalization occurs through many-body Coulomb scattering. We consider one-dimensional electron gas described by Newton equations of motion with many-body Coulomb forces. These equations are solved by molecular dynamics technique. Thermalization of the non-equilibrium distribution towards Maxwell function is demonstrated for a single-subband GaAs wire.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 157-160
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Near-Band Edge Spectral Hole in Quantum Well: No Evidence for Subpicosecond Plasma Thermalization
Autorzy:: Mos̆ko, M.
Mos̆ková, A.
Powiązania:: https://bibliotekanauki.pl/articles/1952682.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
78.47.+p
Opis:: We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10$\text{}^{10}$ cm$\text{}^{-2}$) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1055-1059
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect
Autorzy:: Vagner, P.
Mos̆ko, M.
Powiązania:: https://bibliotekanauki.pl/articles/1952718.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.-h
73.50.Bk
Opis:: We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1103-1107
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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