- Tytuł:
- Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
- Autorzy:
-
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1402221.pdf
- Data publikacji:
- 2015-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Qv
73.40.Gk - Opis:
- Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
- Źródło:
-
Acta Physica Polonica A; 2015, 128, 5; 887-890
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł