Autor: Dargys, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Control of Valence-Band Hole Spin by Electric Field
Autorzy:: Dargys, A.
Powiązania:: https://bibliotekanauki.pl/articles/2037172.pdf
Data publikacji:: 2004-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
73.40.Gk
78.55.-m
79.90.+b
Opis:: Coherent properties of the hole spin in an electric field are investigated. The tunneling between valence bands is used to control the transitions between the spin states. Extensive numerical studies using the time-dependent Schrödinger equation for valence band are presented to demonstrate the characteristic properties of the hole spin dynamics in dc, harmonic, as well as optimized electric fields for real valence bands of silicon. The paper also shows how one can connect the average hole spin with the initial hole wave function in the time-dependent Schrödinger equation.
Źródło:: Acta Physica Polonica A; 2004, 105, 3; 295-306
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Semiconductor Spintronics: Role of the Valence-Band Holes
Autorzy:: Dargys, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041626.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
73.40.Gk
78.55.-m
79.90.+b
Opis:: Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors and flipping of the hole spin by an ultrashort electric field pulse. It is shown that heavy, light, and split-off holes have different spin surfaces. In general, the shape of the surface in real semiconductors may depend on the hole wave vector direction and magnitude. The concept of spin surface is used to explain very strong anisotropy of hole spin injection efficiency observed recently in ferromagnetic-semiconductor structures and in optimizing ultrafast spin switching. It was shown that, of all spin flipping mechanisms, the most effective one is associated with hole transfer between different spin surfaces in high electric fields. The less effective mechanisms are related to valence band warping and nonparabolicity. Examples of the hole spin flipping dynamics and the discussion on ultrafast control of spin in semiconductors by π-type electrical pulses are presented.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 46-55
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Acoustic Phonon Activated and Assisted Tunnelling in Ge:Sb,P
Autorzy:: Žurauskienė, N.
Dargys, A.
Powiązania:: https://bibliotekanauki.pl/articles/1952435.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.70.Ms
73.40.Gk
79.70.+q
Opis:: The influence of lattice vibrations on the field ionization rate of shallow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon assisted tunnelling) and through the excited donor levels (phonon activated tunnelling) is considered. Both processes are shown to enhance the tunnelling rate.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 993-996
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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