- Tytuł:
- Effect of Accumulation Layer on Tunneling in ZnSe-ZnTe Double Barrier Heterostructures
- Autorzy:
-
Bała, P.
Ryszewski, R.
Bała, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1872642.pdf
- Data publikacji:
- 1995-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
03.65.-w
73.40.Gk - Opis:
- The tunneling probability in double barrier heterostructures can be affected by various effects. One of the most significant is presence of the accumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 2; 341-344
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł