- Tytuł:
- Efficient Emission from InAlGaAs Single Quantum Dots with Low Lattice Misfit and AlGaAs Indirect Bandgap Barrier
- Autorzy:
-
Słupiński, T.
Korona, K.
Papierska, J.
Borysiuk, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1398581.pdf
- Data publikacji:
- 2016-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Cr
73.22.-f
78.47.jd - Opis:
- We report on molecular beam epitaxy growth and properties of rarely studied quaternary In_{0.4}(Al_{0.75}Ga_{0.25})_{0.6}As self-assembled quantum dots, which show strong and efficient emission of red light from single quantum dots. The increased yield is, among others, due to efficient energy transfer from indirect band-gap Al_{0.75}Ga_{0.25}As barriers. To maximize photon energy emitted from quantum dots, low In composition, x_{In} = 0.4 was applied, which also lowered the lattice misfit close to the limit of 2D/3D transition in the Stranski-Krastanov growth mode. Time-resolved micro-photoluminescence shows emission at 650-750 nm. Well-resolved single quantum dot photoluminescence lines (decay time of ≈ 1-2 ns) are observed despite a high concentration ≈ 3×10¹¹ cm¯² of quantum dots. We discuss this observation assuming newly a role of carriers or excitons diffusion/tunneling between quantum dots at high surface concentration of dots and a possible role of lattice disorder inside the dot on the exciton lifetime.
- Źródło:
-
Acta Physica Polonica A; 2016, 130, 5; 1229-1232
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł