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    Wyświetlanie 1-6 z 6
    Tytuł:
    Zero-Bias Anomaly in Magnetic Tunnel Junctions
    Autorzy:
    Yang, H.
    Yang, S.
    Ilnicki, G.
    Martinek, J.
    Parkin, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1536909.pdf
    Data publikacji:
    2010-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    73.23.-b
    73.22.-f
    Opis:
    We present experimental results, which may indicate the possibility of the coexistence of the Kondo effect and ferromagnetism in macroscopic planar magnetic tunnel junctions with a layer of nanodots inside tunnel barriers. A conductance double peak structure was observed. Magnetic field dependence of the splitting of a conductance peak, and temperature evolution of the conductance curves are well explained from the theoretical point of view according to the predictions of the Kondo physics and cotunneling in the Anderson quantum dot coupled to ferromagnetic leads.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 2; 316-318
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of the Dot-Ring Nanostructure to Control Electrical Transport in the Coulomb Blockade Regime
    Autorzy:
    Janus-Zygmunt, I.
    Kędzierska, B.
    Gorczyca-Goraj, A.
    Kurpas, M.
    Maśka, M.
    Zipper, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376091.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.23.Hk
    73.21.La
    73.22.-f
    Opis:
    Transport properties of a two-dimensional nanostructure composed of a quantum dot surrounded by a quantum ring (dot-ring nanostructure), are discussed. This complex system is a highly controllable object. Conduction through dot-ring nanostructure depends crucially on the coupling strength of its states to the electrodes, which is related to the spatial distribution of the electron's wave functions in dot-ring nanostructure. This distribution can be strongly modified, e.g., by the electrical gating so that the ground and excited states move between the inner dot and the outer ring. In this paper we show that this property can be used to control single-electron DC current through dot-ring nanostructure in the Coulomb blockade regime so that it can be used as a single electron transistor.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1171-1173
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multiband Electronic Structure of Magnetic Quantum Dots: Numerical Studies
    Autorzy:
    Rederth, D.
    Oszwałdowski, R.
    Petukhov, A.
    Pientka, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1029747.pdf
    Data publikacji:
    2018-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    73.22.-f
    75.50.Pp
    Opis:
    Semiconductor quantum dots (QDs) doped with magnetic impurities have been a focus of continuous research for a couple of decades. A significant effort has been devoted to studies of magnetic polarons (MP) in these nanostructures. These collective states arise through exchange interaction between a carrier confined in a QD and localized spins of the magnetic impurities (typically: Mn). Our theoretical description of various MP properties in self-assembled QDs is discussed. We present a self-consistent, temperature-dependent approach to MPs formed by a valence band hole. The Luttinger-Kohn k· p Hamiltonian is used to account for the important effects of spin-orbit interaction.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 3; 343-349
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Structure of Elongated $In_{0.3}Ga_{0.7}As//GaAs$ Quantum Dots
    Autorzy:
    Pieczarka, M.
    Musiał, A.
    Podemski, P.
    Sęk, G.
    Misiewicz, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399091.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    73.21.La
    73.22.-f
    Opis:
    In this contribution the electronic structure of large $In_{0.3}Ga_{0.7}As//GaAs$ quantum dots is studied theoretically by means of 8 band k · p modeling. These quantum dots constitute unique physical system due to the low strain limit of the Stranski-Krastanow growth mode resulting in relatively large physical volume and elongation of the quantum dots in [1-10] direction. As a result of these critical growth conditions the electronic structure is expected to be very sensitive to the nanostructure size, shape, and composition of the quantum dot as well as the accompanying wetting layer. Another peculiarity of investigated system is the confining potential which is rather shallow and weakened in comparison to standard quantum dots. It makes them very interesting in view of both fundamental study and potential applications. To reveal physical mechanisms determining the optical properties of the investigated system, the electronic structure, mainly the number of confined states, and the wave function extension as a function of both quantum dot size and geometry have been simulated numerically and the importance of electron-hole Coulomb interactions has been evaluated.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 809-812
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ab Initio Analysis of a Quantum Dot Induced by a Local External Potential in a Semiconducting Carbon Nanotube
    Autorzy:
    Kostyrko, T.
    Krompiewski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810605.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.48.De
    85.35.Kt
    73.21.La
    73.22.-f
    Opis:
    Using the density functional theory we study the influence of external charge probes on the electronic structure of semiconducting carbon nanotubes in the vicinity of the Fermi level. We show that the spatially limited potential due to the probe can create localized electronic states in the energy gap and at the edges of the conductance band. By filling these localized states with additional electrons one obtains a quantum dot, which can be tuned by modifying the properties of the external charge probe. We analyze dependence of the electronic structure of the dot on the spatial extension of the potential as well as on the nanotube radius.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 387-389
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron and Exciton Quasi-Stationary s-States in Open Spherical Quantum Dots
    Autorzy:
    Tkach, M.
    Seti, Ju.
    Voitsekhivska, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419890.pdf
    Data publikacji:
    2012-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.15.Dx
    73.21.La
    73.22.Dj
    73.90.+f
    Opis:
    The theoretical calculation of spectral parameters of electron and exciton quasi-stationary s-states in open spherical quantum dot is performed within the effective mass approximation and rectangular potentials model. The conceptions of probability distribution functions (over quasi-momentum or energy) of electron location inside of quantum dot and their spectral characteristics: generalized resonance energies and widths are introduced. It is shown that the generalized resonance energies and widths, obtained within the distribution functions, satisfy the Heisenberg uncertainty principle for the barrier widths varying from zero to infinity. At the same time, the ordinary resonance energies and widths defined as complex poles of scattering S-matrix, do not satisfy it for the small barrier widths and, therefore, are correct only for the open quantum dots with rather wide potential barriers.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 1; 207-211
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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