Temat: 03.65.Yz - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Singlet-Triplet Dephasing in Asymmetric Quantum Dot Molecules
Autorzy:: Marcinowski, Ł.
Roszak, K.
Machnikowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1791331.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
03.65.Yz
72.10.Di
03.67.Lx
Opis:: We discuss pure dephasing of singlet-triplet superpositions in two-electron double quantum dots due to elastic phonon scattering. We generalize our previous results to a system built of two non-identical dots. We show that the asymmetry must be very strong in order to considerably affect the dephasing rate.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 874-876
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Phonon-Induced Pure Dephasing of Two-Electron Spin States in Vertical Quantum Dot Molecules
Autorzy:: Roszak, K.
Machnikowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1791332.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
03.65.Yz
72.10.Di
03.67.Lx
Opis:: Phonon-induced dephasing of two-electron spin states in two vertically stacked self-assembled GaAs/InGaAs quantum dots is studied. A pure dephasing process due to elastic phonon scattering is found to dominate at low temperatures. This process is independent of the spin-orbit coupling and does not require the presence of a magnetic field. It relies on interdot tunneling and the Pauli principle, which make the double quantum dot gate for spin based quantum computing possible, and therefore cannot be avoided.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 877-878
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview
Autorzy:: Martins, F.
Hackens, B.
Sellier, H.
Liu, P.
Pala, M. G.
Baltazar, S.
Desplanque, L.
Wallart, X.
Bayot, V.
Huant, S.
Powiązania:: https://bibliotekanauki.pl/articles/2047914.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
73.23.Ad
03.65.Yz
85.35.Ds
Opis:: This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 569-575
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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