- Tytuł:
- Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
- Autorzy:
-
Klenovský, P.
Křápek, V.
Humlíček, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1398560.pdf
- Data publikacji:
- 2016-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.21.La
75.75.-c
85.35.Be
68.65.Hb - Opis:
- We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 μeV/325 μeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.
- Źródło:
-
Acta Physica Polonica A; 2016, 129, 1a; A-62-A-65
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł