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Wyświetlanie 1-15 z 27
Tytuł:
Potential Energy Fluctuation in Quasi Two-Dimensional Electron Gas Due to External Ionized Impurities
Autorzy:
Kębliński, P.
Powiązania:
https://bibliotekanauki.pl/articles/1890766.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Hb
Opis:
Two-dimensional electron gas separated from Coulomb centers by a spacer is considered. Electrons are treated semi classically in limit of weak fluctuation and T = 0. Two screening models, Thomas-Fermi and RPA, are in dependently used. The second moment of the potential energy distribution is calculated analytically as a function of the spacer width. The qualitative arguments for the Gaussian character of the distribution are given and the density of states for such a distribution is calculated.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 321-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Electric and Magnetic Fields on Donor States in Semiconductor Quantum Wells
Autorzy:
Rolnik, S.
Adamowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1952076.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
73.20.Hb
Opis:
An influence of static external electric and magnetic fields on donor states in a quantum well is studied by variational means. The energies of the 1s and 2p$\text{}_{±}$ hydrogenic states were calculated for different structure parameters (well depth and width) and different fields applied. The calculated 1s-2p$\text{}_{±}$ transition energies agree well with experimental data.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 915-918
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stark Effect for Donors in Double Quantum Wells
Autorzy:
Rolnik, S.
Adamowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933967.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
73.20.Hb
Opis:
The problem of a hydrogenic donor in a semiconductor double quantum well under a homogeneous electric field is studied by variational means. The energy levels corresponding to the quantum states 1s, 2s, 2p have been calculated with the help of the many-element variational basis consisting of the exponential functions. The influence of the electric field on the donor binding energy is determined for different impurity positions. The 1s-2p transition energies have been calculated for a possible comparison with experiment.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 893-896
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Influence on Auger Effect on Shallow Donors in CdF$\text{}_{2}$:Mn$\text{}^{2+}$ Luminescence
Autorzy:
Kamińska, A.
Suchocki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1968121.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Hb
73.50.Gr
Opis:
Direct observation of the suppression of the Auger effect on shallow donors by the magnetic field in the luminescence of manganese ions in semiconducting CdF$\text{}_{2}$:Mn crystals is presented. The magnetic field decreases the probability of the Auger effect, which is spin-dependent energy transfer from the manganese ions to the electrons occupying shallow donors. This results in the increase in the decay times of the luminescence.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 815-818
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment
Autorzy:
Frantskevich, N.
Mazanik, A.
Frantskevich, A.
Kołtunowicz, T.
Żukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503982.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
73.20.Hb
Opis:
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 105-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Levels Induced by CdTe/ZnTe Quantum Dots
Autorzy:
Zielony, E.
Placzek-Popko, E.
Roznicka, A.
Gumienny, Z.
Szatkowski, J.
Dyba, P.
Pacuski, W.
Kruse, C.
Hommel, D.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048061.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 630-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Traps in ZnTe with CdTe Quantum Dots
Autorzy:
Zielony, E.
Płaczek-Popko, E.
Gumienny, Z.
Trzmiel, J.
Karczewski, G.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791335.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 885-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polaron Effect on the Binding Energy of Shallow Donor in Cylindrical Quantum Dot
Autorzy:
Charrour, R.
Bouhassoune, M.
Bria, D.
Nougaoui, A.
Fliyou, M.
Powiązania:
https://bibliotekanauki.pl/articles/2011186.pdf
Data publikacji:
1999-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.38.+i
73.20.Dx
73.20.Hb
Opis:
In the framework of the effective-mass approximation and the modified Lee-Low-Pines variational method, we present a theoretical study of the effect of the confined longitudinal-optical phonon and two types of surface-optical phonon (top and side mode) on the binding energy of shallow donor in cylindrical quantum dot. The effect of quantum confinement is described by an infinitely deep potential well. The impact of these different phonon modes is important and depends on the dimension of the quantum dot.
Źródło:
Acta Physica Polonica A; 1999, 96, 6; 759-768
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions
Autorzy:
Dobaczewski, L.
Langer, J. M.
Missous, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929743.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.30.+y
73.40.Kp
73.20.Hb
Opis:
The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 741-744
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
Autorzy:
Placzek-Popko, E.
Szatkowski, J.
Zielony, E.
Gumienny, Z.
Dobaczewski, L.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/2048047.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 621-623
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Pressure Studies of Semiconductors in the Far-Infrared: Donor States in Quasi-2D
Autorzy:
Weinstein, B. A.
Tischler, J. G.
Chen, R. J.
Nickel, H. A.
McCombe, B. D.
Dzyubenko, A. B.
Sivachenko, A.
Powiązania:
https://bibliotekanauki.pl/articles/2014129.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.20.Dx
73.20.Hb
Opis:
We review recent experimental advances by the Buffalo group in performing far-infrared magnetospectroscopy under fine tuning of applied high hydrostatic pressure. Experiments are reported for the effects of pressure on Si donors in modulation doped GaAs/AlGaAs quantum wells. We clearly observe pressure-mediated competition between free (i.e., Landau level) and bound electron states - the latter arising from both neutral (D$\text{}^{0}$) and charged (D$\text{}^{-}$) donor species. With increasing pressure, there is a progression of the observed spectra from being dominated by cyclotron resonance and the D$\text{}^{-}$ singlet (or singlet-like bound magnetoplasmon) transitions, to showing the D$\text{}^{0}$ 1s → 2p$\text{}^{+}$ line. The main reason for this evolution is the decrease in electrons due to the crossover of the Si levels associated with the Γ (well) and X (barrier) conduction minima. Indeed, for pressures above 30 kbar the Γ(well)-X(barrier) crossover quenches all the transitions. However, we find strong evidence that electrons are independently lost to a trap, which becomes active several kbar below this crossing. A possible candidate for this trap is residual Se impurities in the barriers. We present the results of detailed numerical calculation which are found to agree very well with the measured field dependencies of the cyclotron resonance, D$\text{}^{0}$ and D$\text{}^{-}$ transition energies. In the sample with the highest doping, a new transition is observed for fields and pressures above 7.5 T and 5 kbar. Reasons for this apparent anomaly are discussed.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 241-257
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopy of Charged Donors and Many-Electron Effects in Semiconductor Quantum Wells
Autorzy:
McCombe, B. D.
Jiang, Z. X.
Tischler, J. G.
Weinstein, B. A.
Hawrylak, P.
Powiązania:
https://bibliotekanauki.pl/articles/2011126.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
73.20.Hb
78.66.Fd
Opis:
Far infrared magnetospectroscopic studies of negative donor ions (D$\text{}^{-}$), and donors in the presence of many excess electrons in high magnetic fields in GaAs/AlGaAs quantum wells are reviewed. Both singlet and triplet transitions of well-center D$\text{}^{-}$ions were observed and are in good agreement with recent theoretical calculations. For off-well-center D$\text{}^{-}$ions evidence for a predicted magnetic-field-induced "unbinding" of the second electron was found. In the presence of many excess electrons the D$\text{}^{-}$singlet and -triplet transitions are blue-shifted substantially and evolve into bound magnetoplasmon excitations. Cusps are observed at integral and fractional Landau-level filling factors (ν) in a plot of normalized blue-shift of the D$\text{}^{-}$singlet-like bound magnetoplasmon transition vs. ν. For ν<1, the singlet-like bound magnetoplasmon transition continuously approaches the isolated D$\text{}^{-}$singlet transition with increasing magnetic field, while the triplet-like transition loses strength, irrespective of the electron density. Exact diagonalization studies of a donor ion with a few electrons in a parabolic lateral confining potential show the importance of electron-electron interactions and localization due to the long-range fluctuating potential in explaining this behavior. High pressure studies in a specially designed diamond anvil cell exhibit a continuous evolution from bound magnetoplasmon transitions to isolated D$\text{}^{-}$transitions to neutral donor transitions in a single sample as the pressure is increased and the electron density in the wells is decreased.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 559-572
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Double-Donor Energy Structure in Concentric Quantum Rings under Magnetic Field and Hydrostatic Pressure
Autorzy:
Fulla, M.
Marín, J.
Londoño, D.
Duque, C.
Mora-Ramos, M.
Powiązania:
https://bibliotekanauki.pl/articles/1194836.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.20.Hb
73.21.La
Opis:
A model for an artificial hydrogen molecule consisting of two positive on-axis Coulombic centers and two electrons coupled to them inside a double concentric quantum ring is considered. Such a nanostructure is assumed to be under the influence of external probes like hydrostatic pressure and magnetic field. By using the adiabatic approximation, the ground state energy is calculated as a function of the outer center line radius and the impurity Coulombic center separation, for different values of the hydrostatic pressure and magnetic field strength. In contrast to the single properties imposed by nature on the actual hydrogen molecule, our model allows us to explore a great variety of properties of the artificial hydrogen molecule by changing the ring dimensions. The artificial hydrogen molecule energy structure may be tuned by changing the external field strengths.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 220-223
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$D_2^+$ Molecular Complex in Ring-Like Nanostructures: Hydrostatic Pressure and Electromagnetic Field Effects
Autorzy:
Fulla, M.
Marín, J.
Gutiérrez, W.
Duque, C.
Mora-Ramos, M.
Powiązania:
https://bibliotekanauki.pl/articles/1215648.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.20.Hb
73.21.La
Opis:
In this work we investigate the energy states in a $D_2^+$ complex formed by the coupling of a conduction band electron and two donor centers in a quantum ring with rectangular cross-section. The influences of externally applied probes like electric and magnetic fields and hydrostatic pressure together with the change in the relative position between the two Coulombic centers are particularly studied, highlighting the important contribution of the repulsive inter-center interaction. The destruction of the Aharonov-Bohm oscillations of the ground state associated with the localization of the electron states in the system is discussed.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 241-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of Residual Impurities in Si-Doped MBE Grown GaAs
Autorzy:
Kaniewska, M.
Regiński, K.
Kaniewski, J.
Muszalski, J.
Ornoch, L.
Adamczewska, J.
Marczewski, J.
Bugajski, M.
Mizera, E.
Powiązania:
https://bibliotekanauki.pl/articles/1933820.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.40.Νs
73.20.Hb
Opis:
The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 775-778
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 27

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