- Tytuł:
- Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
- Autorzy:
-
Placzek-Popko, E.
Szatkowski, J.
Zielony, E.
Gumienny, Z.
Dobaczewski, L.
Karczewski, G. - Powiązania:
- https://bibliotekanauki.pl/articles/2048047.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Ga
73.21.La
73.20.Hb - Opis:
- In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 621-623
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł