- Tytuł:
- Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
- Autorzy:
-
Sadeghzadeh, M. A.
Mironov, O. A.
Emeleus, C. J.
Parry, C. P.
Phillips, P. J.
Parker, E. H. C.
Whall, T. A. - Powiązania:
- https://bibliotekanauki.pl/articles/1992074.pdf
- Data publikacji:
- 1998-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 73.20.Fz
- Opis:
- We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 3; 503-508
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł