- Tytuł:
- Electron Localization in Sb-Doped Si/SiGe Superlattices
- Autorzy:
-
Dietl, T.
Jaroszyński, J.
Sawicki, M.
Głód, P.
Wróbel, J.
Stöger, G.
Brunthaler, G.
Bauer, G.
Schäffler, F. - Powiązania:
- https://bibliotekanauki.pl/articles/1933732.pdf
- Data publikacji:
- 1995-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Cw
72.15.Rn
73.20.Fz - Opis:
- Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D $\text{}_{∥}$/D$\text{}_{⊥}$ ≈ 10$\text{}^{3}$ the system behaves as 3D in respect of localization by disorder.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 4; 699-702
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł