Temat: 71.25.Hc - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers
Autorzy:: Dobaczewski, L.
Maude, D. K.
Missous, M.
Portal, J. C.
Powiązania:: https://bibliotekanauki.pl/articles/1931958.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.25.Hc
71.55.Eq
73.20.Dx
Opis:: Electronic transport phenomena in molecular beam epitaxy grown silicon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investigated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifestation of the DX centres was demonstrated.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 201-204
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Megagauss Cyclotron Resonance and Quantum Hall Effect of 2D Electron Gas in HgCdMnTe
Autorzy:: Grabecki, G.
Takeyama, S.
Dietl, T.
Takamasu, T.
Shimamotο, Y.
Miura, N.
Powiązania:: https://bibliotekanauki.pl/articles/1933749.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.25.Hc
73.50.Fq
73.20.Dx
73.40.Lq
Opis:: Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotron resonance and quantum Hall effect are measured for the same samples. The values of the resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband mixing that occurs for the upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong decrease in the Hall resistance is assigned to the field-induced metal-insulator transition in our system.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 731-734
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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