Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "78.20.hb" wg kryterium: Wszystkie pola


Wyświetlanie 1-2 z 2
Tytuł:
Spectroscopy of Charged Donors and Many-Electron Effects in Semiconductor Quantum Wells
Autorzy:
McCombe, B. D.
Jiang, Z. X.
Tischler, J. G.
Weinstein, B. A.
Hawrylak, P.
Powiązania:
https://bibliotekanauki.pl/articles/2011126.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
73.20.Hb
78.66.Fd
Opis:
Far infrared magnetospectroscopic studies of negative donor ions (D$\text{}^{-}$), and donors in the presence of many excess electrons in high magnetic fields in GaAs/AlGaAs quantum wells are reviewed. Both singlet and triplet transitions of well-center D$\text{}^{-}$ions were observed and are in good agreement with recent theoretical calculations. For off-well-center D$\text{}^{-}$ions evidence for a predicted magnetic-field-induced "unbinding" of the second electron was found. In the presence of many excess electrons the D$\text{}^{-}$singlet and -triplet transitions are blue-shifted substantially and evolve into bound magnetoplasmon excitations. Cusps are observed at integral and fractional Landau-level filling factors (ν) in a plot of normalized blue-shift of the D$\text{}^{-}$singlet-like bound magnetoplasmon transition vs. ν. For ν<1, the singlet-like bound magnetoplasmon transition continuously approaches the isolated D$\text{}^{-}$singlet transition with increasing magnetic field, while the triplet-like transition loses strength, irrespective of the electron density. Exact diagonalization studies of a donor ion with a few electrons in a parabolic lateral confining potential show the importance of electron-electron interactions and localization due to the long-range fluctuating potential in explaining this behavior. High pressure studies in a specially designed diamond anvil cell exhibit a continuous evolution from bound magnetoplasmon transitions to isolated D$\text{}^{-}$transitions to neutral donor transitions in a single sample as the pressure is increased and the electron density in the wells is decreased.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 559-572
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Pressure Studies of Semiconductors in the Far-Infrared: Donor States in Quasi-2D
Autorzy:
Weinstein, B. A.
Tischler, J. G.
Chen, R. J.
Nickel, H. A.
McCombe, B. D.
Dzyubenko, A. B.
Sivachenko, A.
Powiązania:
https://bibliotekanauki.pl/articles/2014129.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.20.Dx
73.20.Hb
Opis:
We review recent experimental advances by the Buffalo group in performing far-infrared magnetospectroscopy under fine tuning of applied high hydrostatic pressure. Experiments are reported for the effects of pressure on Si donors in modulation doped GaAs/AlGaAs quantum wells. We clearly observe pressure-mediated competition between free (i.e., Landau level) and bound electron states - the latter arising from both neutral (D$\text{}^{0}$) and charged (D$\text{}^{-}$) donor species. With increasing pressure, there is a progression of the observed spectra from being dominated by cyclotron resonance and the D$\text{}^{-}$ singlet (or singlet-like bound magnetoplasmon) transitions, to showing the D$\text{}^{0}$ 1s → 2p$\text{}^{+}$ line. The main reason for this evolution is the decrease in electrons due to the crossover of the Si levels associated with the Γ (well) and X (barrier) conduction minima. Indeed, for pressures above 30 kbar the Γ(well)-X(barrier) crossover quenches all the transitions. However, we find strong evidence that electrons are independently lost to a trap, which becomes active several kbar below this crossing. A possible candidate for this trap is residual Se impurities in the barriers. We present the results of detailed numerical calculation which are found to agree very well with the measured field dependencies of the cyclotron resonance, D$\text{}^{0}$ and D$\text{}^{-}$ transition energies. In the sample with the highest doping, a new transition is observed for fields and pressures above 7.5 T and 5 kbar. Reasons for this apparent anomaly are discussed.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 241-257
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies