- Tytuł:
- The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
- Autorzy:
-
Matys, M.
Miczek, M.
Adamowicz, B.
Żytkiewicz, Z.
Kamińska, E.
Piotrowska, A.
Hashizume, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1492736.pdf
- Data publikacji:
- 2011-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.-m
71.35.-y
73.20.-r
71.55.-i
02.70.Dh - Opis:
- The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł