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Wyświetlanie 1-4 z 4
Tytuł:
Effect of Annealing Temperature on the Electric and Dielectric Properties of $Se_{70}Te_{15}Bi_{15}$ Films
Autorzy:
Atyia, H.
Powiązania:
https://bibliotekanauki.pl/articles/1207359.pdf
Data publikacji:
2014-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ng
77.22.-d
Opis:
The effect of annealing at different temperatures between $T_{g}$ and $T_{c}$ on the AC conductivity and dielectric properties was studied for $Se_{70}Te_{15}Bi_{15}$ films grown by thermal evaporation technique. The films were characterized by X-ray diffraction, differential thermal analysis, and energy dispersive X-ray spectroscopy. X-ray diffraction analysis shows the occurrence of amorphous to polycrystalline transformation for films annealed at annealing temperature $T_{a}$≥ 473 K. AC conductivity $σ_{AC}(ω)$ was studied as a function of $T_{a}$, frequencies (0.1-100 kHz) and working temperatures (303-393 K). It was found that $σ_{AC}(ω)$ obeyed $Aω^{s}$ law. According to the values of s and its temperature dependence, the AC conduction mechanism was determined in terms of the correlated barrier hopping and quantum mechanical tunneling models for the as deposited and annealed films, respectively. The DC and AC activation energies were determined as a function of $T_{a}$. Values of dielectric constant $ε_1$ and dielectric loss $ε_2$ were found to increase with increasing $T_{a}$. A Debye-like relaxation of dielectric behavior was observed for polycrystalline films, and was found to be a thermally activated process.
Źródło:
Acta Physica Polonica A; 2014, 125, 1; 98-104
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AC Conductivity and Dielectric Properties οf Amorphous $Te_{42}As_{36}Ge_{10}Si_{12}$ Glass
Autorzy:
Hegab, N.
El-Mallah, H.
Powiązania:
https://bibliotekanauki.pl/articles/1585075.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ng
77.22.-d
Opis:
$Te_{42}As_{36}Ge_{10}Si_{12}$ chalcogenide composition was prepared by conventional melt-quenching. The ac conductivity and the dielectric properties were carried out in the frequency range 0.5×$10^{3}$-4×$10^{6}$ Hz and temperature range 300-423 K. The analysis of the experimental results of the frequency dependence of ac conductivity $σ_{ac}(ω)$ indicates that $σ_{ac}(ω)$ is proportional to $ω^{s}$ where s> 1. The temperature dependence of both ac conductivity and the parameter s is reasonably well interpreted by the correlated barrier hopping model. The maximum barrier height $W_{m}$ calculated from ac conductivity and the density of localized states were determined. Values of dielectric constant $ε_{1}$ and dielectric loss $ε_{2}$ were found to decrease with frequency and increase with temperature. The analysis of dielectric loss leads to determine the barrier height $W_{m}$ and agrees with that proposed by the theory of hopping of charge carriers over potential barrier between charged defect states as suggested by Elliott in case of chalcogenide glasses.
Źródło:
Acta Physica Polonica A; 2009, 116, 6; 1048-1052
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ac Conductivity and Dielectric Properties of Amorphous $Ge_{15}Se_{60}X_{25}$ ( X = As or Sn) Films
Autorzy:
Hegab, N.
Afifi, M.
Atyia, H.
Ismael, M.
Powiązania:
https://bibliotekanauki.pl/articles/1505386.pdf
Data publikacji:
2011-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ng
77.22.-d
Opis:
The ac conductivity and dielectric properties of $Ge_{15}Se_{60} X_{25}$ (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at $10^{-5}$ Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range $10^2-10^5$ Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant $ε_1$ were found to decrease with frequency and increase with temperature. The maximum barrier height $W_{m}$ for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.
Źródło:
Acta Physica Polonica A; 2011, 119, 3; 416-423
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ac Conductivity Measurement of $Cd_{5}Se_{95-x}Zn_{x}$ Chalcogenide Semiconductor Using Correlated Barrier Hopping Model
Autorzy:
Ganaie, Mohsin
Zulfequar, M.
Powiązania:
https://bibliotekanauki.pl/articles/1402318.pdf
Data publikacji:
2015-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ng
77.22.-d
Opis:
$Cd_{5}Se_{95-x}Zn_{x}$ (x=0, 2, 4, 6) chalcogenide semiconductors were prepared by conventional melt-quenching and were characterized by X-ray diffraction, scanning electron microscopy, and Fourier transform infrared studies. Ac conductivity of $Cd_{5}Se_{95-x}Zn_{x}$ chalcogenide semiconductor has been investigated in the frequency range of 1 kHz-1 MHz and in the temperature range of 290-370 K. The analysis of the experimental results indicates that the ac conductivity is temperature, frequency and concentration dependent. Ac conductivity is found to obey the power law $\omega^{s}$ where s < 1. A strong dependence of ac conductivity and exponent s can be well interpreted in terms of correlated barrier hopping model. The maximum barrier height W_{m} were calculated from the results of dielectric loss according to the Guintini equation that agree with the theory of hopping of charge carriers over potential barrier as suggested by Elliot in case of chalcogenide semiconductors.
Źródło:
Acta Physica Polonica A; 2015, 128, 1; 59-63
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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