Autor: Wilamowski, Z. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Anisotropy of Magnetic Interactions in HgFeSe
Autorzy:: Wilamowski, Z.
Przybylińska, H.
Joss, W.
Guillot, M.
Powiązania:: https://bibliotekanauki.pl/articles/1921599.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
75.20.Hr
Opis:: Magnetic properties (susceptibility, high-field torque and magnetization) of cubic HgFeSe are analyzed. Van Vleck magnetism of Fe$\text{}^{2+}$ is well evidenced. The energy splitting of the Fe levels in HgSe is shown to differ considerably from that in other II-VI compounds.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 689-692
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Consequences of Spatial Fluctuation of Coulomb Potential in AlGaAs with DX Centers
Autorzy:: Wilamowski, Z.
Kossut, J.
Jantsch, W.
Ostermayer, G.
Powiązania:: https://bibliotekanauki.pl/articles/1890983.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Dp
71.45.Jp
72.80.Ey
Opis:: Electric charges on randomly distributed impurities in semiconductors produce a spatially fluctuating potential. When the impurities are partially filled, their occupancy is not random but there appears a spatial correlation of the impurity charges appearing due to the inter-impurity Coulomb interactions. We show that when these interactions are taken into account then (i) the activation energy of the electron concentration, (ii) thermal emission kinetics, (iii) capture kinetics, (iv) persistent photoconductivity kinetics and (v) the electron mobility (in a steady state as well as during transients) in GaAlAs:Si can be explained in a consistent way. The energy diagram con cerning the DX center levels with respect to minima of the conduction band as well as the capture and emission barriers (including the effect of the alloy splitting) is constructed within an approach making use of the notion of the impurity self-screening.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 385-388
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Spatial Correlation of Impurity Charges Induced by Coulomb Interactions - Application to DX Centers in GaAs
Autorzy:: Kossut, J.
Wilamowski, Z.
Dietl, T.
Świątek, K.
Powiązania:: https://bibliotekanauki.pl/articles/1877485.pdf
Data publikacji:: 1991-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
72.20.Dp
71.55.Eq
Opis:: The electron mobility enhancement observed in heavily doped GaAs under hydrostatic pressure is interpreted in terms of spatial correlation between the donor charges within partially occupied system of impurities induced by strong inter-donor Coulomb interaction. A simple analytic theory is given for both DX$\text{}^{0}$ and DX$\text{}^{-}$ models of the impurity state. The mobility is shown to increase together with pressure in both models. Estimates of the energy of the DX level are strongly perturbed by the inter-donor Coulomb interactions.
Źródło:: Acta Physica Polonica A; 1991, 79, 1; 49-58
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: 35×4 Substates of DX Centers in AlGaAs:Si
Autorzy:: Ostermayer, G.
Brunthaler, G.
Stöger, G.
Jantsch, W.
Wilamowski, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1929749.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.80.Ey
Opis:: The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E$\text{}_{B}$ for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 765-768
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Alloy Splitting of the Te-DX States in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:: Ostermayer, G.
Jantsch, W.
Dobosz, D.
Żytkiewicz, Z. R.
Wilamowski, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1929750.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.80.Ey
Opis:: We report investigations of the Hall effect and conductivity of Te doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 769-772
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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