- Tytuł:
- Deep Defects in Low-Temperature GaAs
- Autorzy:
-
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R. - Powiązania:
- https://bibliotekanauki.pl/articles/1923822.pdf
- Data publikacji:
- 1992-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.-i
72.80.Ey - Opis:
- Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
- Źródło:
-
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł