- Tytuł:
- Electrical Properties of InGaP Doped with Si
- Autorzy:
-
Litwin-Staszewska, E.
Trzeciakowski, W.
Piotrzkowski, R.
Gonzalez, L. - Powiązania:
- https://bibliotekanauki.pl/articles/1991938.pdf
- Data publikacji:
- 1998-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Fr
72.80.Ey
71.55.Eq - Opis:
- We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E$\text{}_{F}$). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 3; 431-435
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł